Electrothermal Model Parameters Extraction and Evaluation Based on BSIM-CMG for 7-nm Nanosheet Gate-All-Around Transistor

Ren Hua Liu; Si Qi Yang; Xiao Jin Li; Ya Bin Sun; Yan Ling Shi

doi:10.1109/ICSICT49897.2020.9278358

Electrothermal Model Parameters Extraction and Evaluation Based on BSIM-CMG for 7-nm Nanosheet Gate-All-Around Transistor

Ren Hua Liu
, Si Qi Yang
, Xiao Jin Li^*
, Ya Bin Sun
, Yan Ling Shi

^*Corresponding author for this work

School of Communication and Electronic Engineering

East China Normal University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

In this paper, the BSIM-CMG model parameters are extracted for the nanosheet gate-AlI-Around (GAA) transistors with considering the temperature distribution and self-heating (SH) effect. The data used for parameter extraction is obtained from the 3-D TCAD simulation, which is calibrated with the experimental data to ensure the analysis accuracy. The extracted model and its parameter are validated from-40°C to 125°C. In order to evaluate our extracted model, the performance of the 6T-SRAM is investigated considering SH effect within different ambient temperature (TA). The results show that the read and write noise margins are all degenerated with increasing TA, and the static power increases as expected.

Original language	English
Title of host publication	2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings
Editors	Shaofeng Yu, Xiaona Zhu, Ting-Ao Tang
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728162355
DOIs	https://doi.org/10.1109/ICSICT49897.2020.9278358
State	Published - 3 Nov 2020
Event	15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Virtual, Kunming, China Duration: 3 Nov 2020 → 6 Nov 2020

Publication series

Name	2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings

Conference

Conference	15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020
Country/Territory	China
City	Virtual, Kunming
Period	3/11/20 → 6/11/20

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10.1109/ICSICT49897.2020.9278358

Cite this

Liu, R. H., Yang, S. Q., Li, X. J., Sun, Y. B., & Shi, Y. L. (2020). Electrothermal Model Parameters Extraction and Evaluation Based on BSIM-CMG for 7-nm Nanosheet Gate-All-Around Transistor. In S. Yu, X. Zhu, & T.-A. Tang (Eds.), 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings Article 9278358 (2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT49897.2020.9278358

Liu, Ren Hua ; Yang, Si Qi ; Li, Xiao Jin et al. / Electrothermal Model Parameters Extraction and Evaluation Based on BSIM-CMG for 7-nm Nanosheet Gate-All-Around Transistor. 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings. editor / Shaofeng Yu ; Xiaona Zhu ; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2020. (2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings).

@inproceedings{4df6fb5a28484de2a9626f589bc9842b,

title = "Electrothermal Model Parameters Extraction and Evaluation Based on BSIM-CMG for 7-nm Nanosheet Gate-All-Around Transistor",

abstract = "In this paper, the BSIM-CMG model parameters are extracted for the nanosheet gate-AlI-Around (GAA) transistors with considering the temperature distribution and self-heating (SH) effect. The data used for parameter extraction is obtained from the 3-D TCAD simulation, which is calibrated with the experimental data to ensure the analysis accuracy. The extracted model and its parameter are validated from-40°C to 125°C. In order to evaluate our extracted model, the performance of the 6T-SRAM is investigated considering SH effect within different ambient temperature (TA). The results show that the read and write noise margins are all degenerated with increasing TA, and the static power increases as expected.",

author = "Liu, \{Ren Hua\} and Yang, \{Si Qi\} and Li, \{Xiao Jin\} and Sun, \{Ya Bin\} and Shi, \{Yan Ling\}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 ; Conference date: 03-11-2020 Through 06-11-2020",

year = "2020",

month = nov,

day = "3",

doi = "10.1109/ICSICT49897.2020.9278358",

language = "英语",

series = "2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "Shaofeng Yu and Xiaona Zhu and Ting-Ao Tang",

booktitle = "2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings",

address = "美国",

}

Liu, RH, Yang, SQ, Li, XJ , Sun, YB & Shi, YL 2020, Electrothermal Model Parameters Extraction and Evaluation Based on BSIM-CMG for 7-nm Nanosheet Gate-All-Around Transistor. in S Yu, X Zhu & T-A Tang (eds), 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings., 9278358, 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020, Virtual, Kunming, China, 3/11/20. https://doi.org/10.1109/ICSICT49897.2020.9278358

Electrothermal Model Parameters Extraction and Evaluation Based on BSIM-CMG for 7-nm Nanosheet Gate-All-Around Transistor. / Liu, Ren Hua; Yang, Si Qi; Li, Xiao Jin et al.
2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings. ed. / Shaofeng Yu; Xiaona Zhu; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2020. 9278358 (2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Electrothermal Model Parameters Extraction and Evaluation Based on BSIM-CMG for 7-nm Nanosheet Gate-All-Around Transistor

AU - Liu, Ren Hua

AU - Yang, Si Qi

AU - Li, Xiao Jin

AU - Sun, Ya Bin

AU - Shi, Yan Ling

PY - 2020/11/3

Y1 - 2020/11/3

N2 - In this paper, the BSIM-CMG model parameters are extracted for the nanosheet gate-AlI-Around (GAA) transistors with considering the temperature distribution and self-heating (SH) effect. The data used for parameter extraction is obtained from the 3-D TCAD simulation, which is calibrated with the experimental data to ensure the analysis accuracy. The extracted model and its parameter are validated from-40°C to 125°C. In order to evaluate our extracted model, the performance of the 6T-SRAM is investigated considering SH effect within different ambient temperature (TA). The results show that the read and write noise margins are all degenerated with increasing TA, and the static power increases as expected.

AB - In this paper, the BSIM-CMG model parameters are extracted for the nanosheet gate-AlI-Around (GAA) transistors with considering the temperature distribution and self-heating (SH) effect. The data used for parameter extraction is obtained from the 3-D TCAD simulation, which is calibrated with the experimental data to ensure the analysis accuracy. The extracted model and its parameter are validated from-40°C to 125°C. In order to evaluate our extracted model, the performance of the 6T-SRAM is investigated considering SH effect within different ambient temperature (TA). The results show that the read and write noise margins are all degenerated with increasing TA, and the static power increases as expected.

UR - https://www.scopus.com/pages/publications/85099266357

U2 - 10.1109/ICSICT49897.2020.9278358

DO - 10.1109/ICSICT49897.2020.9278358

M3 - 会议稿件

AN - SCOPUS:85099266357

T3 - 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings

BT - 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings

A2 - Yu, Shaofeng

A2 - Zhu, Xiaona

A2 - Tang, Ting-Ao

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020

Y2 - 3 November 2020 through 6 November 2020

ER -

Liu RH, Yang SQ, Li XJ , Sun YB, Shi YL. Electrothermal Model Parameters Extraction and Evaluation Based on BSIM-CMG for 7-nm Nanosheet Gate-All-Around Transistor. In Yu S, Zhu X, Tang TA, editors, 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2020. 9278358. (2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings). doi: 10.1109/ICSICT49897.2020.9278358

Electrothermal Model Parameters Extraction and Evaluation Based on BSIM-CMG for 7-nm Nanosheet Gate-All-Around Transistor

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