Electronic structure and optical responses of nanocrystalline BiGaO 3 films: A combination study of experiment and theory

J. Z. Zhang; H. C. Ding; J. J. Zhu; Y. W. Li; Z. G. Hu; C. G. Duan; X. J. Meng; J. H. Chu

doi:10.1063/1.4867006

Electronic structure and optical responses of nanocrystalline BiGaO ₃ films: A combination study of experiment and theory

J. Z. Zhang
, H. C. Ding
, J. J. Zhu
, Y. W. Li
, Z. G. Hu^*
, C. G. Duan
, X. J. Meng
, J. H. Chu

^*Corresponding author for this work

School of Physics and Electronic Science

CAS - Shanghai Institute of Technical Physics
East China Normal University

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

High-quality nanocrystalline BiGaO₃ (BGO) films have been prepared by a modified sol-gel method. X-ray diffraction analysis shows that the films are polycrystalline and exhibit an orthorhombic structure. The dispersion functions near infrared-ultraviolet region were extracted by fitting spectroscopic ellipsometry with the Tauc-Lorentz model. Moreover, first-principle calculations on dielectric functions and band gap were carried out, which are in good agreement with the experimental results. It was found that BGO belongs to an indirect band gap oxide with the fundamental gap of about 2.17 eV, which is suitable for ferroelectric based photovoltaic devices.

Original language	English
Article number	083110
Journal	Journal of Applied Physics
Volume	115
Issue number	8
DOIs	https://doi.org/10.1063/1.4867006
State	Published - 28 Feb 2014

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title = "Electronic structure and optical responses of nanocrystalline BiGaO 3 films: A combination study of experiment and theory",

abstract = "High-quality nanocrystalline BiGaO3 (BGO) films have been prepared by a modified sol-gel method. X-ray diffraction analysis shows that the films are polycrystalline and exhibit an orthorhombic structure. The dispersion functions near infrared-ultraviolet region were extracted by fitting spectroscopic ellipsometry with the Tauc-Lorentz model. Moreover, first-principle calculations on dielectric functions and band gap were carried out, which are in good agreement with the experimental results. It was found that BGO belongs to an indirect band gap oxide with the fundamental gap of about 2.17 eV, which is suitable for ferroelectric based photovoltaic devices.",

author = "Zhang, \{J. Z.\} and Ding, \{H. C.\} and Zhu, \{J. J.\} and Li, \{Y. W.\} and Hu, \{Z. G.\} and Duan, \{C. G.\} and Meng, \{X. J.\} and Chu, \{J. H.\}",

year = "2014",

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doi = "10.1063/1.4867006",

language = "英语",

volume = "115",

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TY - JOUR

T1 - Electronic structure and optical responses of nanocrystalline BiGaO 3 films

T2 - A combination study of experiment and theory

AU - Zhang, J. Z.

AU - Ding, H. C.

AU - Zhu, J. J.

AU - Li, Y. W.

AU - Hu, Z. G.

AU - Duan, C. G.

AU - Meng, X. J.

AU - Chu, J. H.

PY - 2014/2/28

Y1 - 2014/2/28

N2 - High-quality nanocrystalline BiGaO3 (BGO) films have been prepared by a modified sol-gel method. X-ray diffraction analysis shows that the films are polycrystalline and exhibit an orthorhombic structure. The dispersion functions near infrared-ultraviolet region were extracted by fitting spectroscopic ellipsometry with the Tauc-Lorentz model. Moreover, first-principle calculations on dielectric functions and band gap were carried out, which are in good agreement with the experimental results. It was found that BGO belongs to an indirect band gap oxide with the fundamental gap of about 2.17 eV, which is suitable for ferroelectric based photovoltaic devices.

AB - High-quality nanocrystalline BiGaO3 (BGO) films have been prepared by a modified sol-gel method. X-ray diffraction analysis shows that the films are polycrystalline and exhibit an orthorhombic structure. The dispersion functions near infrared-ultraviolet region were extracted by fitting spectroscopic ellipsometry with the Tauc-Lorentz model. Moreover, first-principle calculations on dielectric functions and band gap were carried out, which are in good agreement with the experimental results. It was found that BGO belongs to an indirect band gap oxide with the fundamental gap of about 2.17 eV, which is suitable for ferroelectric based photovoltaic devices.

UR - https://www.scopus.com/pages/publications/84896740633

U2 - 10.1063/1.4867006

DO - 10.1063/1.4867006

M3 - 文章

AN - SCOPUS:84896740633

SN - 0021-8979

VL - 115

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

M1 - 083110

ER -

Electronic structure and optical responses of nanocrystalline BiGaO ₃ films: A combination study of experiment and theory

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