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Electronic structure and optical properties of zinc-blende GaN quantum dots

  • Dong Hai Feng*
  • , Tian Qing Jia
  • , Zhi Zhan Xu
  • *Corresponding author for this work
  • CAS - Shanghai Institute of Optics and Fine Mechanics
  • Sun Yat-Sen University

Research output: Contribution to journal › Article › peer-review

Abstract

The energy levels of zinc-blende GaN quantum dots (QDs) are studied within the framework of the effective-mass envelope-function approximation. The dependence of the energy of electron and hole states on the quantum dot (QD) size is presented. The selection rules for optical transitions are given and the oscillator strengths of the dipole-allowed transitions for various QD radii are calculated with the wavefunctions of quantized energy levels. The theoretical absorption spectrum of GaN QDs is in good agreement with the existing experimental result.

Original languageEnglish
Pages (from-to)1016-1020
Number of pages5
JournalChinese Physics (Overseas Edition)
Volume12
Issue number9
DOIs
StatePublished - 2003
Externally publishedYes

Keywords

  • Electronic structure
  • GaN
  • Optical properties
  • Quantum dots

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