Electronic Assessment of Novel Nanosheet RFET With Dual-Doped Source/Drain

To overcome the limitation of lower on-current in conventional Schottky barrier reconfigurable field-effect transistors (SB-RFETs) with metal source/drain, a novel nanosheet reconfigurable field-effect transistor (RFET) with dual-doped source/drain (DD-RFET) is proposed in this work for the first time. Compared to the conventional SB-RFET, the on-state current I_on improves by 61.4× for n-type program and 42.8× for p-type program, respectively. The thermal carrier emission instead of Schottky tunneling is demonstrated to contribute for the improved driven current in the proposed DD-RFET. The impact of geometric sizes and materials, such as control-gate length (L_CG), program gate length (L_PG), and spacer dielectric constant (K_SP), is investigated in detail. The key metrics, including on-state current I_on, off-sate current I_off, maximum of transconductance g_max, and intrinsic delay τ_d, are used to evaluate the performance during optimization. This article provides solutions for RFET in high-performance applications.