TY - JOUR
T1 - Electronic Assessment of Novel Arch-Shaped Asymmetrical Reconfigurable Field-Effect Transistor
AU - Li, Xianglong
AU - Sun, Yabin
AU - Li, Xiaojin
AU - Shi, Yanling
AU - Liu, Ziyu
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2020/4/1
Y1 - 2020/4/1
N2 - In this article, a novel arch-shaped asymmetrical reconfigurable field-effect transistor (RFET) has been proposed for the first time. By adding an arch-shaped source region in a silicon nanowire, the ON-state saturated current ( ION) is found to raise about 6.72 times for the n-type and 5.39× for the p-type, compared with conventional RFET. The tunneling and conduction mechanism is investigated in detail by 3-D technology computer aided design (TCAD) simulations. It is demonstrated that the geometry parameters of the arch-shaped source in our proposed asymmetrical RFET have a significant impact on the tunneling area, tunneling strength, and serial resistance. Moreover, the arch-shaped source is able to reduce the gate capacitance ( Cgg ) as well. The increased ION and the decreased Cgg lower the propagation delay decreased by 51.9% in basic combination logic applications.
AB - In this article, a novel arch-shaped asymmetrical reconfigurable field-effect transistor (RFET) has been proposed for the first time. By adding an arch-shaped source region in a silicon nanowire, the ON-state saturated current ( ION) is found to raise about 6.72 times for the n-type and 5.39× for the p-type, compared with conventional RFET. The tunneling and conduction mechanism is investigated in detail by 3-D technology computer aided design (TCAD) simulations. It is demonstrated that the geometry parameters of the arch-shaped source in our proposed asymmetrical RFET have a significant impact on the tunneling area, tunneling strength, and serial resistance. Moreover, the arch-shaped source is able to reduce the gate capacitance ( Cgg ) as well. The increased ION and the decreased Cgg lower the propagation delay decreased by 51.9% in basic combination logic applications.
KW - Arch-shaped source
KW - Schottky barriers
KW - band-to-band tunneling (BTBT)
KW - reconfigurable field-effect transistor (RFET)
KW - silicon nanowires (SiNW)
UR - https://www.scopus.com/pages/publications/85082854526
U2 - 10.1109/TED.2020.2973004
DO - 10.1109/TED.2020.2973004
M3 - 文章
AN - SCOPUS:85082854526
SN - 0018-9383
VL - 67
SP - 1894
EP - 1901
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 4
M1 - 9018250
ER -