Electron transport properties of In0.53Ga0.47As/ In0.52Al0.48As quantum wells with two occupied subbands

  • Li Yan Shang*
  • , Tie Lin
  • , Wen Zheng Zhou
  • , Zhi Ming Huang
  • , Dong Lin Li
  • , Hong Ling Gao
  • , Li Jie Cui
  • , Yi Ping Zeng
  • , Shao Ling Guo
  • , Jun Hao Chu
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Magnetotransport properties of two-dimensional electron gas have been investigated for three In0.53Ga0.47As/ In0.52Al0.48As quantum well samples having two occupied subbands with different well widths. When the intersubband scattering is considered, we have obtained the subband density, transport scattering time, quantum scattering time and intersubband scattering time, respectively, by analyzing the result of fast Fourier transform of the first derivative of Shubnikov-de Haas oscillations. It is found that the main scattering mechanism is due to small-angle scattering, such as ionized impurity scattering, for the first subband electrons.

Original languageEnglish
Pages (from-to)2481-2485
Number of pages5
JournalWuli Xuebao/Acta Physica Sinica
Volume57
Issue number4
StatePublished - Apr 2008
Externally publishedYes

Keywords

  • Scattering time
  • Self-consistent calculation
  • Two-dimensional electron gas

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