Electron transport in the AlGaAs/InGaAs double-heterostructure pseudomorphic high-electron-mobility transistor

Yongsheng Gui; Shaoling Guo; Guozhen Zheng; Junhao Chu; Xiaohua Fang; Kai Qiu; Xingwu Wang

doi:10.1063/1.126018

Electron transport in the AlGaAs/InGaAs double-heterostructure pseudomorphic high-electron-mobility transistor

Yongsheng Gui^*, Shaoling Guo, Guozhen Zheng, Junhao Chu, Xiaohua Fang, Kai Qiu, Xingwu Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Variable magnetic-field Hall measurement has been used to investigate the transport properties in the double-heterostructure pseudomorphic high-electron-mobility transistor in the temperature range from 1.6 to 240 K. The experimental data have been analyzed by using a hybrid approach consisting of the mobility spectrum (MS) technique followed by a multicarrier fitting (MCF) procedure. Both the Shubnikov-de Haas measurements and the hybrid MS + MCF approach agree well with the theoretical calculations. The resulting temperature dependence of mobility and concentration for ground subbands and excited subbands shows that the excited subbands play an important role in the observed transport behavior.

Original language	English
Pages (from-to)	1309-1311
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	10
DOIs	https://doi.org/10.1063/1.126018
State	Published - 6 Mar 2000
Externally published	Yes

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title = "Electron transport in the AlGaAs/InGaAs double-heterostructure pseudomorphic high-electron-mobility transistor",

abstract = "Variable magnetic-field Hall measurement has been used to investigate the transport properties in the double-heterostructure pseudomorphic high-electron-mobility transistor in the temperature range from 1.6 to 240 K. The experimental data have been analyzed by using a hybrid approach consisting of the mobility spectrum (MS) technique followed by a multicarrier fitting (MCF) procedure. Both the Shubnikov-de Haas measurements and the hybrid MS + MCF approach agree well with the theoretical calculations. The resulting temperature dependence of mobility and concentration for ground subbands and excited subbands shows that the excited subbands play an important role in the observed transport behavior.",

author = "Yongsheng Gui and Shaoling Guo and Guozhen Zheng and Junhao Chu and Xiaohua Fang and Kai Qiu and Xingwu Wang",

year = "2000",

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doi = "10.1063/1.126018",

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T1 - Electron transport in the AlGaAs/InGaAs double-heterostructure pseudomorphic high-electron-mobility transistor

AU - Gui, Yongsheng

AU - Guo, Shaoling

AU - Zheng, Guozhen

AU - Chu, Junhao

AU - Fang, Xiaohua

AU - Qiu, Kai

AU - Wang, Xingwu

PY - 2000/3/6

Y1 - 2000/3/6

N2 - Variable magnetic-field Hall measurement has been used to investigate the transport properties in the double-heterostructure pseudomorphic high-electron-mobility transistor in the temperature range from 1.6 to 240 K. The experimental data have been analyzed by using a hybrid approach consisting of the mobility spectrum (MS) technique followed by a multicarrier fitting (MCF) procedure. Both the Shubnikov-de Haas measurements and the hybrid MS + MCF approach agree well with the theoretical calculations. The resulting temperature dependence of mobility and concentration for ground subbands and excited subbands shows that the excited subbands play an important role in the observed transport behavior.

AB - Variable magnetic-field Hall measurement has been used to investigate the transport properties in the double-heterostructure pseudomorphic high-electron-mobility transistor in the temperature range from 1.6 to 240 K. The experimental data have been analyzed by using a hybrid approach consisting of the mobility spectrum (MS) technique followed by a multicarrier fitting (MCF) procedure. Both the Shubnikov-de Haas measurements and the hybrid MS + MCF approach agree well with the theoretical calculations. The resulting temperature dependence of mobility and concentration for ground subbands and excited subbands shows that the excited subbands play an important role in the observed transport behavior.

UR - https://www.scopus.com/pages/publications/0000131076

U2 - 10.1063/1.126018

DO - 10.1063/1.126018

M3 - 文章

AN - SCOPUS:0000131076

SN - 0003-6951

VL - 76

SP - 1309

EP - 1311

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Electron transport in the AlGaAs/InGaAs double-heterostructure pseudomorphic high-electron-mobility transistor

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