Electron subband structure of HgCdTe metal-insulator-semiconductor heterostructures

Junhao Chu; R. Sizmann; Kun Liu; I. Nachev; F. Koch

doi:10.1016/0038-1101(94)90370-0

Electron subband structure of HgCdTe metal-insulator-semiconductor heterostructures

Junhao Chu^*
, R. Sizmann
, Kun Liu
, I. Nachev
, F. Koch

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The doping and pressure dependence of the surface layer capacitance has been investigated in this work for Hg_0.8Cd_0.2Te with doping concentration N_A from 3.6 × 10¹⁶ to 1.1 × 10¹⁸ cm^{-nd under hydrostatic pressure up to 7.3 kbar at temperature 4.2 K. By using a capacitance-voltage spectroscopy (C-V) fitting model, the subband structures such as the first subband energy E₀ as a function of the energy gap E_g and the variation of E₀} with doping have been determined. The second onset of the inversion i capacitance spectroscopy on HgCdTe MIS structure has been observed. By using an expanded C-V fitting model several quantum parameters relating to the second subband of inversion layer electron can be determined quantitatively.

Original language	English
Pages (from-to)	1125-1128
Number of pages	4
Journal	Solid-State Electronics
Volume	37
Issue number	4-6
DOIs	https://doi.org/10.1016/0038-1101(94)90370-0
State	Published - 1994
Externally published	Yes

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@article{a9a65d94f22b456aa31911e35b930114,

title = "Electron subband structure of HgCdTe metal-insulator-semiconductor heterostructures",

abstract = "The doping and pressure dependence of the surface layer capacitance has been investigated in this work for Hg0.8Cd0.2Te with doping concentration NA from 3.6 × 1016 to 1.1 × 1018 cm-nd under hydrostatic pressure up to 7.3 kbar at temperature 4.2 K. By using a capacitance-voltage spectroscopy (C-V) fitting model, the subband structures such as the first subband energy E0 as a function of the energy gap Eg and the variation of E0 with doping have been determined. The second onset of the inversion i capacitance spectroscopy on HgCdTe MIS structure has been observed. By using an expanded C-V fitting model several quantum parameters relating to the second subband of inversion layer electron can be determined quantitatively.",

author = "Junhao Chu and R. Sizmann and Kun Liu and I. Nachev and F. Koch",

year = "1994",

doi = "10.1016/0038-1101(94)90370-0",

language = "英语",

volume = "37",

pages = "1125--1128",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "4-6",

}

TY - JOUR

T1 - Electron subband structure of HgCdTe metal-insulator-semiconductor heterostructures

AU - Chu, Junhao

AU - Sizmann, R.

AU - Liu, Kun

AU - Nachev, I.

AU - Koch, F.

PY - 1994

Y1 - 1994

N2 - The doping and pressure dependence of the surface layer capacitance has been investigated in this work for Hg0.8Cd0.2Te with doping concentration NA from 3.6 × 1016 to 1.1 × 1018 cm-nd under hydrostatic pressure up to 7.3 kbar at temperature 4.2 K. By using a capacitance-voltage spectroscopy (C-V) fitting model, the subband structures such as the first subband energy E0 as a function of the energy gap Eg and the variation of E0 with doping have been determined. The second onset of the inversion i capacitance spectroscopy on HgCdTe MIS structure has been observed. By using an expanded C-V fitting model several quantum parameters relating to the second subband of inversion layer electron can be determined quantitatively.

AB - The doping and pressure dependence of the surface layer capacitance has been investigated in this work for Hg0.8Cd0.2Te with doping concentration NA from 3.6 × 1016 to 1.1 × 1018 cm-nd under hydrostatic pressure up to 7.3 kbar at temperature 4.2 K. By using a capacitance-voltage spectroscopy (C-V) fitting model, the subband structures such as the first subband energy E0 as a function of the energy gap Eg and the variation of E0 with doping have been determined. The second onset of the inversion i capacitance spectroscopy on HgCdTe MIS structure has been observed. By using an expanded C-V fitting model several quantum parameters relating to the second subband of inversion layer electron can be determined quantitatively.

UR - https://www.scopus.com/pages/publications/0028409286

U2 - 10.1016/0038-1101(94)90370-0

DO - 10.1016/0038-1101(94)90370-0

M3 - 文章

AN - SCOPUS:0028409286

SN - 0038-1101

VL - 37

SP - 1125

EP - 1128

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 4-6

ER -

Electron subband structure of HgCdTe metal-insulator-semiconductor heterostructures

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