Electron injection of SrTiO3/Si interfacial layer

J. H. Ma; J. L. Sun; J. H. Qin; Y. H. Gao; T. Lin; H. Shen; F. W. Shi; X. J. Meng; J. H. Chu; S. J. Liu; J. Li

doi:10.1063/1.2980019

Electron injection of SrTiO₃/Si interfacial layer

J. H. Ma
, J. L. Sun
, J. H. Qin
, Y. H. Gao
, T. Lin
, H. Shen
, F. W. Shi
, X. J. Meng
, J. H. Chu
, S. J. Liu
, J. Li

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The electrical properties of the SrTi O3 (STO) Si interfacial layer were studied by measuring STO metal-insulator-semiconductor (MIS) structure. The C-V measurements showed that there existed electron injection at the STO/Si interface under the higher sweep voltages. The electron injection behavior was analyzed and discussed in detail. By analyzing the voltage distribution of the semiconductor Si, the insulator STO, and the STO/Si interfacial layer in MIS structure, the electron injection electric field of interfacial layer was estimated to be about 5.5 MVcm.

Original language	English
Article number	102903
Journal	Applied Physics Letters
Volume	93
Issue number	10
DOIs	https://doi.org/10.1063/1.2980019
State	Published - 2008
Externally published	Yes

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10.1063/1.2980019

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@article{c58b72bd7d204665b0e02f31eaff36da,

title = "Electron injection of SrTiO3/Si interfacial layer",

abstract = "The electrical properties of the SrTi O3 (STO) Si interfacial layer were studied by measuring STO metal-insulator-semiconductor (MIS) structure. The C-V measurements showed that there existed electron injection at the STO/Si interface under the higher sweep voltages. The electron injection behavior was analyzed and discussed in detail. By analyzing the voltage distribution of the semiconductor Si, the insulator STO, and the STO/Si interfacial layer in MIS structure, the electron injection electric field of interfacial layer was estimated to be about 5.5 MVcm.",

author = "Ma, \{J. H.\} and Sun, \{J. L.\} and Qin, \{J. H.\} and Gao, \{Y. H.\} and T. Lin and H. Shen and Shi, \{F. W.\} and Meng, \{X. J.\} and Chu, \{J. H.\} and Liu, \{S. J.\} and J. Li",

year = "2008",

doi = "10.1063/1.2980019",

language = "英语",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Electron injection of SrTiO3/Si interfacial layer

AU - Ma, J. H.

AU - Sun, J. L.

AU - Qin, J. H.

AU - Gao, Y. H.

AU - Lin, T.

AU - Shen, H.

AU - Shi, F. W.

AU - Meng, X. J.

AU - Chu, J. H.

AU - Liu, S. J.

AU - Li, J.

PY - 2008

Y1 - 2008

N2 - The electrical properties of the SrTi O3 (STO) Si interfacial layer were studied by measuring STO metal-insulator-semiconductor (MIS) structure. The C-V measurements showed that there existed electron injection at the STO/Si interface under the higher sweep voltages. The electron injection behavior was analyzed and discussed in detail. By analyzing the voltage distribution of the semiconductor Si, the insulator STO, and the STO/Si interfacial layer in MIS structure, the electron injection electric field of interfacial layer was estimated to be about 5.5 MVcm.

AB - The electrical properties of the SrTi O3 (STO) Si interfacial layer were studied by measuring STO metal-insulator-semiconductor (MIS) structure. The C-V measurements showed that there existed electron injection at the STO/Si interface under the higher sweep voltages. The electron injection behavior was analyzed and discussed in detail. By analyzing the voltage distribution of the semiconductor Si, the insulator STO, and the STO/Si interfacial layer in MIS structure, the electron injection electric field of interfacial layer was estimated to be about 5.5 MVcm.

UR - https://www.scopus.com/pages/publications/51749091506

U2 - 10.1063/1.2980019

DO - 10.1063/1.2980019

M3 - 文章

AN - SCOPUS:51749091506

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 102903

ER -

Electron injection of SrTiO₃/Si interfacial layer

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