Electron beam annealing for component optimization in Si-Sb-Te material

  • Yan Cheng*
  • , San Nian Song
  • , Zhong Hua Zhang
  • , Zhi Tang Song
  • , Bo Liu
  • , Song Lin Feng
  • , Ze Zhang
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Electron beam (EB) annealing was used to acquire a reasonable and stable component in Si-Sb-Te material. For Si2Sb2Te5 phase change material, EB irradiation can induce phase separation and some regions have remained unchanged, which manifests as SixSb2Te3. The component of these steady areas was considered as reasonable in which Sb2Te3 is a stable compound. The crystallized Si3.3Sb2Te3 film after EB irradiation exhibited nano-scale grains with well-proportioned distribution and these grains were all with Sb2Te3 structure surrounded by amorphous. This unique structure brings fast phase change speed which is at least 12 times more rapidly than Si2Sb2Te5 material because it localizes atoms’ diffusion in a nano-area during reversible phase transition process.

Original languageEnglish
Title of host publicationAdvanced Functional Materials
EditorsYafang Han, Zhongwei Gu, Qiang Fu
PublisherTrans Tech Publications Ltd
Pages44-48
Number of pages5
ISBN (Electronic)9783038353942
DOIs
StatePublished - 2015
Externally publishedYes
EventChinese Materials Congress, CMC 2014 - Chengdu, China
Duration: 4 Jul 20147 Jul 2014

Publication series

NameMaterials Science Forum
Volume815
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

ConferenceChinese Materials Congress, CMC 2014
Country/TerritoryChina
CityChengdu
Period4/07/147/07/14

Keywords

  • Electron beam annealing
  • Microstructure
  • Phase change material
  • TEM

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