Electro-thermal Investigation on SOI Accumulation Mode Tri-gate LDMOS

Zhangjun Shi; Xiaojin Li; Yabin Sun; Yanlin Shi

doi:10.1109/ICICM54364.2021.9660247

Electro-thermal Investigation on SOI Accumulation Mode Tri-gate LDMOS

Zhangjun Shi
, Xiaojin Li^*
, Yabin Sun
, Yanlin Shi

^*Corresponding author for this work

School of Communication and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

An electro-thermal co-optimization has been carried out on silicon-on-insulator (SOI) accumulation mode tri-gate (ATG) LDMOS by TCAD simulation. Internal electric field, temperature distribution, critical heat removal path and the thermal resistance of SOI-ATG LDMOS are investigated, providing deep insights into its self-heating mechanism and thermal-aware design. Besides, the junction depth of source/drain, ambient temperature and boundary thermal resistance are optimized to mitigate the self-heating effect (SHE) in SOI-ATG LDMOS. Furthermore, different trench dielectrics are also compared to achieve an electro-thermal co-optimization of SOI-ATG LDMOS.

Original language	English
Title of host publication	2021 6th International Conference on Integrated Circuits and Microsystems, ICICM 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	210-213
Number of pages	4
ISBN (Electronic)	9781665458863
DOIs	https://doi.org/10.1109/ICICM54364.2021.9660247
State	Published - 2021
Event	6th International Conference on Integrated Circuits and Microsystems, ICICM 2021 - Nanjing, China Duration: 22 Oct 2021 → 24 Oct 2021

Publication series

Name	2021 6th International Conference on Integrated Circuits and Microsystems, ICICM 2021

Conference

Conference	6th International Conference on Integrated Circuits and Microsystems, ICICM 2021
Country/Territory	China
City	Nanjing
Period	22/10/21 → 24/10/21

Keywords

Co-optimization
Electro-thermal simulation
SOI-ATG LDMOS
Self-heating effect

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10.1109/ICICM54364.2021.9660247

Cite this

Shi, Z., Li, X., Sun, Y., & Shi, Y. (2021). Electro-thermal Investigation on SOI Accumulation Mode Tri-gate LDMOS. In 2021 6th International Conference on Integrated Circuits and Microsystems, ICICM 2021 (pp. 210-213). (2021 6th International Conference on Integrated Circuits and Microsystems, ICICM 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICICM54364.2021.9660247

Shi, Zhangjun ; Li, Xiaojin ; Sun, Yabin et al. / Electro-thermal Investigation on SOI Accumulation Mode Tri-gate LDMOS. 2021 6th International Conference on Integrated Circuits and Microsystems, ICICM 2021. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 210-213 (2021 6th International Conference on Integrated Circuits and Microsystems, ICICM 2021).

@inproceedings{86094efcff204ed0b8dce30c55c97d01,

title = "Electro-thermal Investigation on SOI Accumulation Mode Tri-gate LDMOS",

abstract = "An electro-thermal co-optimization has been carried out on silicon-on-insulator (SOI) accumulation mode tri-gate (ATG) LDMOS by TCAD simulation. Internal electric field, temperature distribution, critical heat removal path and the thermal resistance of SOI-ATG LDMOS are investigated, providing deep insights into its self-heating mechanism and thermal-aware design. Besides, the junction depth of source/drain, ambient temperature and boundary thermal resistance are optimized to mitigate the self-heating effect (SHE) in SOI-ATG LDMOS. Furthermore, different trench dielectrics are also compared to achieve an electro-thermal co-optimization of SOI-ATG LDMOS.",

keywords = "Co-optimization, Electro-thermal simulation, SOI-ATG LDMOS, Self-heating effect",

author = "Zhangjun Shi and Xiaojin Li and Yabin Sun and Yanlin Shi",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 6th International Conference on Integrated Circuits and Microsystems, ICICM 2021 ; Conference date: 22-10-2021 Through 24-10-2021",

year = "2021",

doi = "10.1109/ICICM54364.2021.9660247",

language = "英语",

series = "2021 6th International Conference on Integrated Circuits and Microsystems, ICICM 2021",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "210--213",

booktitle = "2021 6th International Conference on Integrated Circuits and Microsystems, ICICM 2021",

address = "美国",

}

Shi, Z, Li, X , Sun, Y & Shi, Y 2021, Electro-thermal Investigation on SOI Accumulation Mode Tri-gate LDMOS. in 2021 6th International Conference on Integrated Circuits and Microsystems, ICICM 2021. 2021 6th International Conference on Integrated Circuits and Microsystems, ICICM 2021, Institute of Electrical and Electronics Engineers Inc., pp. 210-213, 6th International Conference on Integrated Circuits and Microsystems, ICICM 2021, Nanjing, China, 22/10/21. https://doi.org/10.1109/ICICM54364.2021.9660247

Electro-thermal Investigation on SOI Accumulation Mode Tri-gate LDMOS. / Shi, Zhangjun; Li, Xiaojin ; Sun, Yabin et al.
2021 6th International Conference on Integrated Circuits and Microsystems, ICICM 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 210-213 (2021 6th International Conference on Integrated Circuits and Microsystems, ICICM 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Electro-thermal Investigation on SOI Accumulation Mode Tri-gate LDMOS

AU - Shi, Zhangjun

AU - Li, Xiaojin

AU - Sun, Yabin

AU - Shi, Yanlin

PY - 2021

Y1 - 2021

N2 - An electro-thermal co-optimization has been carried out on silicon-on-insulator (SOI) accumulation mode tri-gate (ATG) LDMOS by TCAD simulation. Internal electric field, temperature distribution, critical heat removal path and the thermal resistance of SOI-ATG LDMOS are investigated, providing deep insights into its self-heating mechanism and thermal-aware design. Besides, the junction depth of source/drain, ambient temperature and boundary thermal resistance are optimized to mitigate the self-heating effect (SHE) in SOI-ATG LDMOS. Furthermore, different trench dielectrics are also compared to achieve an electro-thermal co-optimization of SOI-ATG LDMOS.

AB - An electro-thermal co-optimization has been carried out on silicon-on-insulator (SOI) accumulation mode tri-gate (ATG) LDMOS by TCAD simulation. Internal electric field, temperature distribution, critical heat removal path and the thermal resistance of SOI-ATG LDMOS are investigated, providing deep insights into its self-heating mechanism and thermal-aware design. Besides, the junction depth of source/drain, ambient temperature and boundary thermal resistance are optimized to mitigate the self-heating effect (SHE) in SOI-ATG LDMOS. Furthermore, different trench dielectrics are also compared to achieve an electro-thermal co-optimization of SOI-ATG LDMOS.

KW - Co-optimization

KW - Electro-thermal simulation

KW - SOI-ATG LDMOS

KW - Self-heating effect

UR - https://www.scopus.com/pages/publications/85124524021

U2 - 10.1109/ICICM54364.2021.9660247

DO - 10.1109/ICICM54364.2021.9660247

M3 - 会议稿件

AN - SCOPUS:85124524021

T3 - 2021 6th International Conference on Integrated Circuits and Microsystems, ICICM 2021

SP - 210

EP - 213

BT - 2021 6th International Conference on Integrated Circuits and Microsystems, ICICM 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 6th International Conference on Integrated Circuits and Microsystems, ICICM 2021

Y2 - 22 October 2021 through 24 October 2021

ER -

Shi Z, Li X , Sun Y, Shi Y. Electro-thermal Investigation on SOI Accumulation Mode Tri-gate LDMOS. In 2021 6th International Conference on Integrated Circuits and Microsystems, ICICM 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 210-213. (2021 6th International Conference on Integrated Circuits and Microsystems, ICICM 2021). doi: 10.1109/ICICM54364.2021.9660247

Electro-thermal Investigation on SOI Accumulation Mode Tri-gate LDMOS

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