Abstract
DC electrical transport properties of perovskite BiFeO3 thin films were studied in the temperature range from 80K to 300K. The films with high or low resistance on SrTiO3 substrates were prepared by a chemical solution deposition method from the same precursor solution at different aged time. For the low resistance samples, the voltage dependence of current is ohmic and temperature independent at low electric fields. At a medium strength of electric field, it behaves like a typical Schottky diode. For the high resistance samples it is found that electric carriers move along the grain boundaries of the films with an activation energy of 0.57eV at low electric field while the conduction mechanism can be described with the Frenkel-Poole model with an energy barrier of 0.12eV at higher electric fields, The measurable maximum values of remnant polarization are 2. 6μC/cm2 and 28. 8μC/cm2 at the temperature of 85K for the two kinds of samples, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 401-404 |
| Number of pages | 4 |
| Journal | Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves |
| Volume | 25 |
| Issue number | 6 |
| State | Published - Dec 2006 |
| Externally published | Yes |
Keywords
- Biferroic film
- Bismuth ferrate film
- Electrical transportation