Electrical properties of SrBi2Ta2O9 ferroelectric thin films at low temperature

Pingxiong Yang; David L. Carroll; John Ballato; Robert W. Schwartz

doi:10.1063/1.1527700

Electrical properties of SrBi₂Ta₂O₉ ferroelectric thin films at low temperature

Pingxiong Yang^*
, David L. Carroll
, John Ballato
, Robert W. Schwartz

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Electrical properties of SrBi₂Ta₂O₉ ferroelectric thin films were discussed. Thin film capacitors with platinum electrodes on silicon wafers were studied from 10 to 300 K. Results showed that with the decrease in temperature from 300 to 200 K there is 11% reduction in remanent polarization from 300 K value and further decrease to 100 K results 87% reduction from 200 K value.

Original language	English
Pages (from-to)	4583-4585
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	24
DOIs	https://doi.org/10.1063/1.1527700
State	Published - 9 Dec 2002
Externally published	Yes

Access to Document

10.1063/1.1527700

Cite this

@article{c3c8e1452f504c3da6fe57255386e91e,

title = "Electrical properties of SrBi2Ta2O9 ferroelectric thin films at low temperature",

abstract = "Electrical properties of SrBi2Ta2O9 ferroelectric thin films were discussed. Thin film capacitors with platinum electrodes on silicon wafers were studied from 10 to 300 K. Results showed that with the decrease in temperature from 300 to 200 K there is 11\% reduction in remanent polarization from 300 K value and further decrease to 100 K results 87\% reduction from 200 K value.",

author = "Pingxiong Yang and Carroll, \{David L.\} and John Ballato and Schwartz, \{Robert W.\}",

year = "2002",

month = dec,

day = "9",

doi = "10.1063/1.1527700",

language = "英语",

volume = "81",

pages = "4583--4585",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

}

TY - JOUR

T1 - Electrical properties of SrBi2Ta2O9 ferroelectric thin films at low temperature

AU - Yang, Pingxiong

AU - Carroll, David L.

AU - Ballato, John

AU - Schwartz, Robert W.

PY - 2002/12/9

Y1 - 2002/12/9

N2 - Electrical properties of SrBi2Ta2O9 ferroelectric thin films were discussed. Thin film capacitors with platinum electrodes on silicon wafers were studied from 10 to 300 K. Results showed that with the decrease in temperature from 300 to 200 K there is 11% reduction in remanent polarization from 300 K value and further decrease to 100 K results 87% reduction from 200 K value.

AB - Electrical properties of SrBi2Ta2O9 ferroelectric thin films were discussed. Thin film capacitors with platinum electrodes on silicon wafers were studied from 10 to 300 K. Results showed that with the decrease in temperature from 300 to 200 K there is 11% reduction in remanent polarization from 300 K value and further decrease to 100 K results 87% reduction from 200 K value.

UR - https://www.scopus.com/pages/publications/0037049573

U2 - 10.1063/1.1527700

DO - 10.1063/1.1527700

M3 - 文章

AN - SCOPUS:0037049573

SN - 0003-6951

VL - 81

SP - 4583

EP - 4585

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Electrical properties of SrBi₂Ta₂O₉ ferroelectric thin films at low temperature

Abstract

Access to Document

Other files and links

Fingerprint

Cite this