@inproceedings{908abd4bb0db4a67959900b2a4be0b95,
title = "Electrical properties of metamorphic in0.52Al 0.48As/In0.65Ga0.35As HEMT's on GaAs substrate",
abstract = "Variable magnetic field Hall measurements were performed to investigate the electrical properties in In0.52Al0.48As/In 0.65Ga0.35As metamorphic high electron mobility transistors (MMHEMT's) on GaAs substrate at the temperature range from 4 to 100 K. The Shubnikov-de Hass (SdH) measurement shows the two-dimensional electronic behavior and two-subband electron occupation in MMHEMT's. The electron densities and mobilities of the two subbands are obtained by fast Fourier transform analysis. Both the SdH oscillations and conventional Hall analysis are in good agreement in the determination of total electron density, which is about 2.1×1012 cm-2 due to incomplete transfer of the electrons. The temperature dependence of the electron mobility indicates that at low temperature alloy scattering dominates, whereas at high temperature, the mobility is mainly limited by optical phonon scattering.",
author = "Qiu, \{Z. J.\} and R. Liu and Zhang, \{S. L.\} and Gui, \{Y. S.\} and Cui, \{L. J.\} and Zeng, \{Y. P.\} and Chu, \{J. H.\}",
year = "2006",
doi = "10.1109/ICSICT.2006.306557",
language = "英语",
isbn = "1424401615",
series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",
publisher = "IEEE Computer Society",
pages = "875--877",
booktitle = "ICSICT-2006",
address = "美国",
note = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 23-10-2006 Through 26-10-2006",
}