Electrical properties, equations of state, and phase transitions in Hg_1-xCd_xTe under high pressure

The resistance-pressure and capacitance-pressure relationships for Hg_1-xCd_xTe(x=0.19, 0.22) under room temperature and pressures up to 20 GPa were studied in a diamond anvil cell using resistance and capacitance measurements established by us. The experimental results show that Hg_1-xCd_xTe(x=0.19, 0.22) undergoes two electronic structure transitions at about 0.7-1.8 GPa, 8.6 GPa and 1.6 GPa, 8.3 GPa, respectively, and two crystal structure transitions at about 2 GPa, above 8.6 GPa and about 1.6 GPa, above 8.3 GPa, respectively. In the present work, the p-V relationship for Hg_1-xCd_xTe(x=0.21) under room temperature and up to 4.5 GPa was studied by using the piston-cylinder type measurement device. The experimental results indicate that the phase transition in Hg_1-xCd_xTe(x=0.21) occurs at about 2.1 GPa. Its equations of state before and after the phase transition were also given.