Electrical control of magnetic proximity effect in a graphene/multiferroic heterostructure

The proximity effect, which offers a proper route to extend the properties of 2D materials, is of great current interest. In hybrid systems formed by graphene and multiferroic materials, effective manipulation of the proximity effect is expected through magneto-electric coupling. In this work, we report the electrical control of the magnetic proximity effect in graphene/BiFeO₃ heterostructures. The obvious ferroelectric gating effect on graphene is achieved using BiFeO₃ as a top gate. The interfacial magnetic exchange field has a notable dependence on the top gate voltage, giving rise to an electrical modulation on Zeeman splitting and energy gap inside N = 0 Landau level of graphene. Our findings suggest graphene/BiFeO₃ heterostructures provide a broad avenue for realization of future multiferroic electronics and spintronics.