Abstract
The electrical characterization of zinc oxide (ZnO) thin films was studied by using electrochemical capacitance-voltage (C-V) profiling. It was shown that ZnO forms a good Schottky contact with a 0.1 M ZnCl2 electrolytic solution allowing the determination of carrier concentration profiles by C-V measurements. The chemical etching of the ZnO using a solution containing a high concentration of zinc ions was also discussed. It was determined that the dissolution number can vary, but was 3.6 over a range of sample doping levels away from the ZnO/sapphire interface.
| Original language | English |
|---|---|
| Pages (from-to) | 3043-3045 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 84 |
| Issue number | 16 |
| DOIs | |
| State | Published - 19 Apr 2004 |
| Externally published | Yes |