Electrical characterization of zinc oxide thin films by electrochemical capacitance-voltage profiling

X. Tang, A. Clauzonnier, H. I. Campbell, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The electrical characterization of zinc oxide (ZnO) thin films was studied by using electrochemical capacitance-voltage (C-V) profiling. It was shown that ZnO forms a good Schottky contact with a 0.1 M ZnCl2 electrolytic solution allowing the determination of carrier concentration profiles by C-V measurements. The chemical etching of the ZnO using a solution containing a high concentration of zinc ions was also discussed. It was determined that the dissolution number can vary, but was 3.6 over a range of sample doping levels away from the ZnO/sapphire interface.

Original languageEnglish
Pages (from-to)3043-3045
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number16
DOIs
StatePublished - 19 Apr 2004
Externally publishedYes

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