Electrical characterization of subbands in the HgCdTe surface layer

Y. S. Gui; G. Z. Zheng; J. H. Chu; S. L. Guo; X. C. Zhang; D. Y. Tang; Yi Cai

doi:10.1063/1.366369

Electrical characterization of subbands in the HgCdTe surface layer

Y. S. Gui^*
, G. Z. Zheng
, J. H. Chu
, S. L. Guo
, X. C. Zhang
, D. Y. Tang
, Yi Cai

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The subband dispersion relations have been computed as a function of the surface electron concentration in the accumulation layers of n-Hg_1-xCd_xTe photoconductive detectors, while the mobility and concentration for all kinds of carriers in the subband are determined from Shubnikov-de Haas (SdH) oscillation measurements and quantitative mobility spectrum analysis (QMSA). The results show that the QMSA can provide accurate electric parameters for all kinds of carriers in the subband without considering the complex energy band in the semiconductors, while the SdH oscillation can only offer qualitative data because the analysis is based on parabolic energy band approximation.

Original language	English
Pages (from-to)	5000-5004
Number of pages	5
Journal	Journal of Applied Physics
Volume	82
Issue number	10
DOIs	https://doi.org/10.1063/1.366369
State	Published - 15 Nov 1997
Externally published	Yes

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@article{091222d70b75438a8dbe6b61ca19215a,

title = "Electrical characterization of subbands in the HgCdTe surface layer",

abstract = "The subband dispersion relations have been computed as a function of the surface electron concentration in the accumulation layers of n-Hg1-xCdxTe photoconductive detectors, while the mobility and concentration for all kinds of carriers in the subband are determined from Shubnikov-de Haas (SdH) oscillation measurements and quantitative mobility spectrum analysis (QMSA). The results show that the QMSA can provide accurate electric parameters for all kinds of carriers in the subband without considering the complex energy band in the semiconductors, while the SdH oscillation can only offer qualitative data because the analysis is based on parabolic energy band approximation.",

author = "Gui, \{Y. S.\} and Zheng, \{G. Z.\} and Chu, \{J. H.\} and Guo, \{S. L.\} and Zhang, \{X. C.\} and Tang, \{D. Y.\} and Yi Cai",

year = "1997",

month = nov,

day = "15",

doi = "10.1063/1.366369",

language = "英语",

volume = "82",

pages = "5000--5004",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Electrical characterization of subbands in the HgCdTe surface layer

AU - Gui, Y. S.

AU - Zheng, G. Z.

AU - Chu, J. H.

AU - Guo, S. L.

AU - Zhang, X. C.

AU - Tang, D. Y.

AU - Cai, Yi

PY - 1997/11/15

Y1 - 1997/11/15

N2 - The subband dispersion relations have been computed as a function of the surface electron concentration in the accumulation layers of n-Hg1-xCdxTe photoconductive detectors, while the mobility and concentration for all kinds of carriers in the subband are determined from Shubnikov-de Haas (SdH) oscillation measurements and quantitative mobility spectrum analysis (QMSA). The results show that the QMSA can provide accurate electric parameters for all kinds of carriers in the subband without considering the complex energy band in the semiconductors, while the SdH oscillation can only offer qualitative data because the analysis is based on parabolic energy band approximation.

AB - The subband dispersion relations have been computed as a function of the surface electron concentration in the accumulation layers of n-Hg1-xCdxTe photoconductive detectors, while the mobility and concentration for all kinds of carriers in the subband are determined from Shubnikov-de Haas (SdH) oscillation measurements and quantitative mobility spectrum analysis (QMSA). The results show that the QMSA can provide accurate electric parameters for all kinds of carriers in the subband without considering the complex energy band in the semiconductors, while the SdH oscillation can only offer qualitative data because the analysis is based on parabolic energy band approximation.

UR - https://www.scopus.com/pages/publications/0007234126

U2 - 10.1063/1.366369

DO - 10.1063/1.366369

M3 - 文章

AN - SCOPUS:0007234126

SN - 0021-8979

VL - 82

SP - 5000

EP - 5004

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Electrical characterization of subbands in the HgCdTe surface layer

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