Electrical behavior on packaging module for the novel photoelectric sensor

J. Q. Han; Y. P. Wang; F. M. Guo; B. Xu; D. Y. Xiong; M. C. Zhou; Y. C. Ye; Z. Q. Zhu; J. H. Chu

doi:10.1109/NEMS.2010.5592200

Electrical behavior on packaging module for the novel photoelectric sensor

J. Q. Han
, Y. P. Wang
, F. M. Guo
, B. Xu
, D. Y. Xiong
, M. C. Zhou
, Y. C. Ye
, Z. Q. Zhu
, J. H. Chu

School of Physics and Electronic Science

East China Normal University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper presents the electrical performance on low-dimensional quantum structure photoelectric sensor. The equivalent circuit model for photoelectric sensor with quantum-dot quantum-well hybrid structure was applied. The parasitical parameters can be used to investigate the performance of photoelectric detector. Based on this model, specific readout circuit was designed and simulated. A prototype was fabricated in 0.5-μm n-well standard CMOS process. Test results were presented and analyzed.

Original language	English
Title of host publication	2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010
Pages	233-236
Number of pages	4
DOIs	https://doi.org/10.1109/NEMS.2010.5592200
State	Published - 2010
Event	5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010 - Xiamen, China Duration: 20 Jan 2010 → 23 Jan 2010

Publication series

Name	2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010

Conference

Conference	5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010
Country/Territory	China
City	Xiamen
Period	20/01/10 → 23/01/10

Keywords

Equivalent circuit
Quantum structure photoelectric sensor
Readout circuit

Access to Document

10.1109/NEMS.2010.5592200

Cite this

Han, J. Q., Wang, Y. P., Guo, F. M., Xu, B., Xiong, D. Y., Zhou, M. C., Ye, Y. C., Zhu, Z. Q., & Chu, J. H. (2010). Electrical behavior on packaging module for the novel photoelectric sensor. In 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010 (pp. 233-236). Article 5592200 (2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010). https://doi.org/10.1109/NEMS.2010.5592200

@inproceedings{346264e1b82d45f3ba5e18e441a56287,

title = "Electrical behavior on packaging module for the novel photoelectric sensor",

abstract = "This paper presents the electrical performance on low-dimensional quantum structure photoelectric sensor. The equivalent circuit model for photoelectric sensor with quantum-dot quantum-well hybrid structure was applied. The parasitical parameters can be used to investigate the performance of photoelectric detector. Based on this model, specific readout circuit was designed and simulated. A prototype was fabricated in 0.5-μm n-well standard CMOS process. Test results were presented and analyzed.",

keywords = "Equivalent circuit, Quantum structure photoelectric sensor, Readout circuit",

author = "Han, \{J. Q.\} and Wang, \{Y. P.\} and Guo, \{F. M.\} and B. Xu and Xiong, \{D. Y.\} and Zhou, \{M. C.\} and Ye, \{Y. C.\} and Zhu, \{Z. Q.\} and Chu, \{J. H.\}",

year = "2010",

doi = "10.1109/NEMS.2010.5592200",

language = "英语",

isbn = "9781424465439",

series = "2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010",

pages = "233--236",

booktitle = "2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010",

note = "5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010 ; Conference date: 20-01-2010 Through 23-01-2010",

}

Han, JQ, Wang, YP, Guo, FM, Xu, B, Xiong, DY, Zhou, MC, Ye, YC, Zhu, ZQ & Chu, JH 2010, Electrical behavior on packaging module for the novel photoelectric sensor. in 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010., 5592200, 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010, pp. 233-236, 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010, Xiamen, China, 20/01/10. https://doi.org/10.1109/NEMS.2010.5592200

Electrical behavior on packaging module for the novel photoelectric sensor. / Han, J. Q.; Wang, Y. P.; Guo, F. M. et al.
2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010. 2010. p. 233-236 5592200 (2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Electrical behavior on packaging module for the novel photoelectric sensor

AU - Han, J. Q.

AU - Wang, Y. P.

AU - Guo, F. M.

AU - Xu, B.

AU - Xiong, D. Y.

AU - Zhou, M. C.

AU - Ye, Y. C.

AU - Zhu, Z. Q.

AU - Chu, J. H.

PY - 2010

Y1 - 2010

N2 - This paper presents the electrical performance on low-dimensional quantum structure photoelectric sensor. The equivalent circuit model for photoelectric sensor with quantum-dot quantum-well hybrid structure was applied. The parasitical parameters can be used to investigate the performance of photoelectric detector. Based on this model, specific readout circuit was designed and simulated. A prototype was fabricated in 0.5-μm n-well standard CMOS process. Test results were presented and analyzed.

AB - This paper presents the electrical performance on low-dimensional quantum structure photoelectric sensor. The equivalent circuit model for photoelectric sensor with quantum-dot quantum-well hybrid structure was applied. The parasitical parameters can be used to investigate the performance of photoelectric detector. Based on this model, specific readout circuit was designed and simulated. A prototype was fabricated in 0.5-μm n-well standard CMOS process. Test results were presented and analyzed.

KW - Equivalent circuit

KW - Quantum structure photoelectric sensor

KW - Readout circuit

UR - https://www.scopus.com/pages/publications/78649305818

U2 - 10.1109/NEMS.2010.5592200

DO - 10.1109/NEMS.2010.5592200

M3 - 会议稿件

AN - SCOPUS:78649305818

SN - 9781424465439

T3 - 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010

SP - 233

EP - 236

BT - 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010

T2 - 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010

Y2 - 20 January 2010 through 23 January 2010

ER -

Han JQ, Wang YP, Guo FM, Xu B, Xiong DY, Zhou MC et al. Electrical behavior on packaging module for the novel photoelectric sensor. In 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010. 2010. p. 233-236. 5592200. (2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010). doi: 10.1109/NEMS.2010.5592200

Electrical behavior on packaging module for the novel photoelectric sensor

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