Electrical and optical properties of Pb (Mg 1/3 Nb 2/3) O 3-PbTiO 3 thin films prepared by chemical solution deposition

A. Y. Liu; X. J. Meng; J. Q. Xue; J. L. Sun; J. Chen; J. H. Chu

doi:10.1063/1.1999859

Electrical and optical properties of Pb (Mg _1/3 Nb _2/3) O ₃-PbTiO ₃ thin films prepared by chemical solution deposition

A. Y. Liu, X. J. Meng, J. Q. Xue, J. L. Sun, J. Chen, J. H. Chu

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

92%Pb (Mg13 Nb23) O3-8%PbTiO3 (PMNT) thin films have been prepared on PtTi SiO2 Si substrate with a LaNiO3 (LNO) buffer layer and on sapphire substrate by a chemical solution deposition method, respectively. X-ray diffraction analysis shows that the PMNT thin films on PtTi SiO2 Si substrate are polycrystalline with (110)-preferential orientation. PtPMNTPt capacitors have been fabricated and show a ferroelectric character with a spontaneous polarization (Ps) of 25.2 μCcm2 and a remanent polarization (Pr) of 6.56 μCcm2. The dielectric constant (εr) and the dissipation factor (tan δ) at 1 kHz are 680 and 0.014, respectively. The band-gap energy of the PMNT thin films on the sapphire substrate was found to be about 4.03 eV by the optical transmission spectra measurement. The optical constants (n, k) of the PMNT thin films in the wavelength range of 2.5-12.6 μm were obtained by infrared spectroscopic ellipsometry measurement.

Original language	English
Article number	072903
Journal	Applied Physics Letters
Volume	87
Issue number	7
DOIs	https://doi.org/10.1063/1.1999859
State	Published - 15 Aug 2005
Externally published	Yes

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@article{98f7f8f0acbd45ee847baf0a361f03fd,

title = "Electrical and optical properties of Pb (Mg 1/3 Nb 2/3) O 3-PbTiO 3 thin films prepared by chemical solution deposition",

abstract = "92\%Pb (Mg13 Nb23) O3-8\%PbTiO3 (PMNT) thin films have been prepared on PtTi SiO2 Si substrate with a LaNiO3 (LNO) buffer layer and on sapphire substrate by a chemical solution deposition method, respectively. X-ray diffraction analysis shows that the PMNT thin films on PtTi SiO2 Si substrate are polycrystalline with (110)-preferential orientation. PtPMNTPt capacitors have been fabricated and show a ferroelectric character with a spontaneous polarization (Ps) of 25.2 μCcm2 and a remanent polarization (Pr) of 6.56 μCcm2. The dielectric constant (εr) and the dissipation factor (tan δ) at 1 kHz are 680 and 0.014, respectively. The band-gap energy of the PMNT thin films on the sapphire substrate was found to be about 4.03 eV by the optical transmission spectra measurement. The optical constants (n, k) of the PMNT thin films in the wavelength range of 2.5-12.6 μm were obtained by infrared spectroscopic ellipsometry measurement.",

author = "Liu, \{A. Y.\} and Meng, \{X. J.\} and Xue, \{J. Q.\} and Sun, \{J. L.\} and J. Chen and Chu, \{J. H.\}",

year = "2005",

month = aug,

day = "15",

doi = "10.1063/1.1999859",

language = "英语",

volume = "87",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Electrical and optical properties of Pb (Mg 1/3 Nb 2/3) O 3-PbTiO 3 thin films prepared by chemical solution deposition

AU - Liu, A. Y.

AU - Meng, X. J.

AU - Xue, J. Q.

AU - Sun, J. L.

AU - Chen, J.

AU - Chu, J. H.

PY - 2005/8/15

Y1 - 2005/8/15

N2 - 92%Pb (Mg13 Nb23) O3-8%PbTiO3 (PMNT) thin films have been prepared on PtTi SiO2 Si substrate with a LaNiO3 (LNO) buffer layer and on sapphire substrate by a chemical solution deposition method, respectively. X-ray diffraction analysis shows that the PMNT thin films on PtTi SiO2 Si substrate are polycrystalline with (110)-preferential orientation. PtPMNTPt capacitors have been fabricated and show a ferroelectric character with a spontaneous polarization (Ps) of 25.2 μCcm2 and a remanent polarization (Pr) of 6.56 μCcm2. The dielectric constant (εr) and the dissipation factor (tan δ) at 1 kHz are 680 and 0.014, respectively. The band-gap energy of the PMNT thin films on the sapphire substrate was found to be about 4.03 eV by the optical transmission spectra measurement. The optical constants (n, k) of the PMNT thin films in the wavelength range of 2.5-12.6 μm were obtained by infrared spectroscopic ellipsometry measurement.

AB - 92%Pb (Mg13 Nb23) O3-8%PbTiO3 (PMNT) thin films have been prepared on PtTi SiO2 Si substrate with a LaNiO3 (LNO) buffer layer and on sapphire substrate by a chemical solution deposition method, respectively. X-ray diffraction analysis shows that the PMNT thin films on PtTi SiO2 Si substrate are polycrystalline with (110)-preferential orientation. PtPMNTPt capacitors have been fabricated and show a ferroelectric character with a spontaneous polarization (Ps) of 25.2 μCcm2 and a remanent polarization (Pr) of 6.56 μCcm2. The dielectric constant (εr) and the dissipation factor (tan δ) at 1 kHz are 680 and 0.014, respectively. The band-gap energy of the PMNT thin films on the sapphire substrate was found to be about 4.03 eV by the optical transmission spectra measurement. The optical constants (n, k) of the PMNT thin films in the wavelength range of 2.5-12.6 μm were obtained by infrared spectroscopic ellipsometry measurement.

UR - https://www.scopus.com/pages/publications/24144432121

U2 - 10.1063/1.1999859

DO - 10.1063/1.1999859

M3 - 文章

AN - SCOPUS:24144432121

SN - 0003-6951

VL - 87

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 072903

ER -

Electrical and optical properties of Pb (Mg _1/3 Nb _2/3) O ₃-PbTiO ₃ thin films prepared by chemical solution deposition

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