Abstract
The development of solution-processed inorganic metal halide perovskite light-emitting diodes (PeLEDs) is currently hindered by low emission efficiency due to morphological defects and severe non-radiative recombination in all-inorganic perovskite emitters. Herein, bright PeLEDs are demonstrated by synergetic morphology control over cesium lead bromide (CsPbBr 3 ) perovskite films with the combination of two additives. The phenethylammonium bromide additive enables the formation of mixed-dimensional CsPbBr 3 perovskites featuring the reduced grain size (<15 nm) and efficient energy funneling, while the dielectric polyethyleneglycol additive promotes the formation of highly compact and pinhole-free perovskite films with defect passivation at grain boundaries. Consequently, green PeLEDs achieve a current efficiency of 37.14 cd A −1 and an external quantum efficiency of 13.14% with the maximum brightness up to 45 990 cd m −2 and high color purity. Furthermore, this method can be effectively extended to realize flexible PeLEDs on plastic substrates with a high efficiency of 31.0 cd A −1 .
| Original language | English |
|---|---|
| Article number | 1801534 |
| Journal | Advanced Optical Materials |
| Volume | 7 |
| Issue number | 4 |
| DOIs | |
| State | Published - 19 Feb 2019 |
| Externally published | Yes |
Keywords
- CsPbBr
- all-inorganic perovskite films
- morphology control
- perovskite light-emitting diodes