Effects of thin MnAl buffer layer on structural and magnetic properties of MnAl films

Xu Hui Zhang; Bin Ma; Zong Zhi Zhang; Qing Yuan Jin

doi:10.1088/1674-1056/19/10/107504

Effects of thin MnAl buffer layer on structural and magnetic properties of MnAl films

Xu Hui Zhang
, Bin Ma^*
, Zong Zhi Zhang
, Qing Yuan Jin

^*Corresponding author for this work

Fudan University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Thin Mn(2 nm)/Al(2 nm) bilayers serving as buffer layers have been prepared prior to the deposition of MnAl films. The ferromagnetic τ-phase forms in the buffer layers at an optimum substrate temperature. As a template it induces the growth of following MnAl film. Compared with the case of film without buffer layer, the growth of nonferromagnetic phase is suppressed and the structural and magnetic properties of MnAl film are improved. Weak dipolar inter-grain coupling is revealed in the MnAl film, and the magnetic reversal process is dominated by magnetic moment rotation.

Original language	English
Article number	107504
Journal	Chinese Physics B
Volume	19
Issue number	10
DOIs	https://doi.org/10.1088/1674-1056/19/10/107504
State	Published - Oct 2010
Externally published	Yes

Keywords

Buffer layer
L1
τ-MnAl

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10.1088/1674-1056/19/10/107504

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title = "Effects of thin MnAl buffer layer on structural and magnetic properties of MnAl films",

abstract = "Thin Mn(2 nm)/Al(2 nm) bilayers serving as buffer layers have been prepared prior to the deposition of MnAl films. The ferromagnetic τ-phase forms in the buffer layers at an optimum substrate temperature. As a template it induces the growth of following MnAl film. Compared with the case of film without buffer layer, the growth of nonferromagnetic phase is suppressed and the structural and magnetic properties of MnAl film are improved. Weak dipolar inter-grain coupling is revealed in the MnAl film, and the magnetic reversal process is dominated by magnetic moment rotation.",

keywords = "Buffer layer, L1, τ-MnAl",

author = "Zhang, \{Xu Hui\} and Bin Ma and Zhang, \{Zong Zhi\} and Jin, \{Qing Yuan\}",

year = "2010",

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language = "英语",

volume = "19",

journal = "Chinese Physics B",

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T1 - Effects of thin MnAl buffer layer on structural and magnetic properties of MnAl films

AU - Zhang, Xu Hui

AU - Ma, Bin

AU - Zhang, Zong Zhi

AU - Jin, Qing Yuan

PY - 2010/10

Y1 - 2010/10

N2 - Thin Mn(2 nm)/Al(2 nm) bilayers serving as buffer layers have been prepared prior to the deposition of MnAl films. The ferromagnetic τ-phase forms in the buffer layers at an optimum substrate temperature. As a template it induces the growth of following MnAl film. Compared with the case of film without buffer layer, the growth of nonferromagnetic phase is suppressed and the structural and magnetic properties of MnAl film are improved. Weak dipolar inter-grain coupling is revealed in the MnAl film, and the magnetic reversal process is dominated by magnetic moment rotation.

AB - Thin Mn(2 nm)/Al(2 nm) bilayers serving as buffer layers have been prepared prior to the deposition of MnAl films. The ferromagnetic τ-phase forms in the buffer layers at an optimum substrate temperature. As a template it induces the growth of following MnAl film. Compared with the case of film without buffer layer, the growth of nonferromagnetic phase is suppressed and the structural and magnetic properties of MnAl film are improved. Weak dipolar inter-grain coupling is revealed in the MnAl film, and the magnetic reversal process is dominated by magnetic moment rotation.

KW - Buffer layer

KW - L1

KW - τ-MnAl

UR - https://www.scopus.com/pages/publications/78649432092

U2 - 10.1088/1674-1056/19/10/107504

DO - 10.1088/1674-1056/19/10/107504

M3 - 文章

AN - SCOPUS:78649432092

SN - 1674-1056

VL - 19

JO - Chinese Physics B

JF - Chinese Physics B

IS - 10

M1 - 107504

ER -

Effects of thin MnAl buffer layer on structural and magnetic properties of MnAl films

Abstract

Keywords

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