Effects of thickness on thermoelectric properties of Bi0.5Sb1.5Te3 thin films

Xiaobin Han; Zhenyu Zhang; Zhengmao Liu; Chao Xu; Xiaowei Lu; Lin Sun; Peng Jiang

doi:10.1007/s13204-020-01441-8

Effects of thickness on thermoelectric properties of Bi_0.5Sb_1.5Te₃ thin films

Xiaobin Han, Zhenyu Zhang, Zhengmao Liu, Chao Xu, Xiaowei Lu, Lin Sun, Peng Jiang

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Bi₂Te₃-based materials have been widely utilized for commercial bulk thermoelectric (TE) devices. For the manufacture of miniaturized TE devices, the large-scale deposition of high-performance Bi₂Te₃-based thin films is crucial. However, it has not yet been effectively resolved. Herein, the Bi_0.5Sb_1.5Te₃ films with different thicknesses were grown on sapphire substrates by controlling the co-sputtering time. We reveal that the film thickness has a significant impact on the electrical transport properties. Due to the mutual influence of electrical conductivity and Seebeck coefficient, there exists an optimal thickness with the maximum power factor is as high as 2900 μW m⁻¹ K⁻². Therefore, systematic research on the thickness-dependent TE characteristics of Bi₂Te₃-based films and the deposition of high-performance films will provide important information for the large-scale development of high-performance micro-TE devices.

Original language	English
Pages (from-to)	2375-2381
Number of pages	7
Journal	Applied Nanoscience (Switzerland)
Volume	10
Issue number	7
DOIs	https://doi.org/10.1007/s13204-020-01441-8
State	Published - 1 Jul 2020
Externally published	Yes

Keywords

BiSbTe
Thermoelectrics
Thickness
Thin film
co-sputtering

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10.1007/s13204-020-01441-8

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title = "Effects of thickness on thermoelectric properties of Bi0.5Sb1.5Te3 thin films",

abstract = "Bi2Te3-based materials have been widely utilized for commercial bulk thermoelectric (TE) devices. For the manufacture of miniaturized TE devices, the large-scale deposition of high-performance Bi2Te3-based thin films is crucial. However, it has not yet been effectively resolved. Herein, the Bi0.5Sb1.5Te3 films with different thicknesses were grown on sapphire substrates by controlling the co-sputtering time. We reveal that the film thickness has a significant impact on the electrical transport properties. Due to the mutual influence of electrical conductivity and Seebeck coefficient, there exists an optimal thickness with the maximum power factor is as high as 2900 μW m−1 K−2. Therefore, systematic research on the thickness-dependent TE characteristics of Bi2Te3-based films and the deposition of high-performance films will provide important information for the large-scale development of high-performance micro-TE devices.",

keywords = "BiSbTe, Thermoelectrics, Thickness, Thin film, co-sputtering",

author = "Xiaobin Han and Zhenyu Zhang and Zhengmao Liu and Chao Xu and Xiaowei Lu and Lin Sun and Peng Jiang",

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year = "2020",

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doi = "10.1007/s13204-020-01441-8",

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T1 - Effects of thickness on thermoelectric properties of Bi0.5Sb1.5Te3 thin films

AU - Han, Xiaobin

AU - Zhang, Zhenyu

AU - Liu, Zhengmao

AU - Xu, Chao

AU - Lu, Xiaowei

AU - Sun, Lin

AU - Jiang, Peng

PY - 2020/7/1

Y1 - 2020/7/1

N2 - Bi2Te3-based materials have been widely utilized for commercial bulk thermoelectric (TE) devices. For the manufacture of miniaturized TE devices, the large-scale deposition of high-performance Bi2Te3-based thin films is crucial. However, it has not yet been effectively resolved. Herein, the Bi0.5Sb1.5Te3 films with different thicknesses were grown on sapphire substrates by controlling the co-sputtering time. We reveal that the film thickness has a significant impact on the electrical transport properties. Due to the mutual influence of electrical conductivity and Seebeck coefficient, there exists an optimal thickness with the maximum power factor is as high as 2900 μW m−1 K−2. Therefore, systematic research on the thickness-dependent TE characteristics of Bi2Te3-based films and the deposition of high-performance films will provide important information for the large-scale development of high-performance micro-TE devices.

AB - Bi2Te3-based materials have been widely utilized for commercial bulk thermoelectric (TE) devices. For the manufacture of miniaturized TE devices, the large-scale deposition of high-performance Bi2Te3-based thin films is crucial. However, it has not yet been effectively resolved. Herein, the Bi0.5Sb1.5Te3 films with different thicknesses were grown on sapphire substrates by controlling the co-sputtering time. We reveal that the film thickness has a significant impact on the electrical transport properties. Due to the mutual influence of electrical conductivity and Seebeck coefficient, there exists an optimal thickness with the maximum power factor is as high as 2900 μW m−1 K−2. Therefore, systematic research on the thickness-dependent TE characteristics of Bi2Te3-based films and the deposition of high-performance films will provide important information for the large-scale development of high-performance micro-TE devices.

KW - BiSbTe

KW - Thermoelectrics

KW - Thickness

KW - Thin film

KW - co-sputtering

UR - https://www.scopus.com/pages/publications/85085087133

U2 - 10.1007/s13204-020-01441-8

DO - 10.1007/s13204-020-01441-8

M3 - 文章

AN - SCOPUS:85085087133

SN - 2190-5509

VL - 10

SP - 2375

EP - 2381

JO - Applied Nanoscience (Switzerland)

JF - Applied Nanoscience (Switzerland)

IS - 7

ER -

Effects of thickness on thermoelectric properties of Bi_0.5Sb_1.5Te₃ thin films

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