Effects of Te precipitation on IR transmittance and crystalline quality of as-grown CdZnTe crystals

Jiqian Zhu; Xiaoping Zhang; Biao Li; Junhao Chu

doi:10.1016/S1350-4495(99)00027-4

Effects of Te precipitation on IR transmittance and crystalline quality of as-grown CdZnTe crystals

Jiqian Zhu, Xiaoping Zhang, Biao Li, Junhao Chu

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

The relationship of the Te precipitated phase concentration in the matrix to IR transmittance and crystalline quality of as-grown CdZnTe wafers was investigated by means of various optical and structural techniques including infrared (IR) transmission, differential scanning calorimetry (DSC) and Rutherford backscattering spectroscopy (RBS). Results indicate that Te precipitates/inclusions in CdZnTe matrix reduce IR transmittance, especially at concentration ≥0.6 wt.%. Additionally, the crystalline perfection of near-stoichiometric as-grown CdZnTe is better than that of non-stoichiometric samples, and decreases with increasing second-phase concentration.

Original language	English
Pages (from-to)	411-415
Number of pages	5
Journal	Infrared Physics and Technology
Volume	40
Issue number	5
DOIs	https://doi.org/10.1016/S1350-4495(99)00027-4
State	Published - Oct 1999
Externally published	Yes

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title = "Effects of Te precipitation on IR transmittance and crystalline quality of as-grown CdZnTe crystals",

abstract = "The relationship of the Te precipitated phase concentration in the matrix to IR transmittance and crystalline quality of as-grown CdZnTe wafers was investigated by means of various optical and structural techniques including infrared (IR) transmission, differential scanning calorimetry (DSC) and Rutherford backscattering spectroscopy (RBS). Results indicate that Te precipitates/inclusions in CdZnTe matrix reduce IR transmittance, especially at concentration ≥0.6 wt.\%. Additionally, the crystalline perfection of near-stoichiometric as-grown CdZnTe is better than that of non-stoichiometric samples, and decreases with increasing second-phase concentration.",

author = "Jiqian Zhu and Xiaoping Zhang and Biao Li and Junhao Chu",

year = "1999",

month = oct,

doi = "10.1016/S1350-4495(99)00027-4",

language = "英语",

volume = "40",

pages = "411--415",

journal = "Infrared Physics and Technology",

issn = "1350-4495",

publisher = "Elsevier B.V.",

number = "5",

}

TY - JOUR

T1 - Effects of Te precipitation on IR transmittance and crystalline quality of as-grown CdZnTe crystals

AU - Zhu, Jiqian

AU - Zhang, Xiaoping

AU - Li, Biao

AU - Chu, Junhao

PY - 1999/10

Y1 - 1999/10

N2 - The relationship of the Te precipitated phase concentration in the matrix to IR transmittance and crystalline quality of as-grown CdZnTe wafers was investigated by means of various optical and structural techniques including infrared (IR) transmission, differential scanning calorimetry (DSC) and Rutherford backscattering spectroscopy (RBS). Results indicate that Te precipitates/inclusions in CdZnTe matrix reduce IR transmittance, especially at concentration ≥0.6 wt.%. Additionally, the crystalline perfection of near-stoichiometric as-grown CdZnTe is better than that of non-stoichiometric samples, and decreases with increasing second-phase concentration.

AB - The relationship of the Te precipitated phase concentration in the matrix to IR transmittance and crystalline quality of as-grown CdZnTe wafers was investigated by means of various optical and structural techniques including infrared (IR) transmission, differential scanning calorimetry (DSC) and Rutherford backscattering spectroscopy (RBS). Results indicate that Te precipitates/inclusions in CdZnTe matrix reduce IR transmittance, especially at concentration ≥0.6 wt.%. Additionally, the crystalline perfection of near-stoichiometric as-grown CdZnTe is better than that of non-stoichiometric samples, and decreases with increasing second-phase concentration.

UR - https://www.scopus.com/pages/publications/0033363099

U2 - 10.1016/S1350-4495(99)00027-4

DO - 10.1016/S1350-4495(99)00027-4

M3 - 文章

AN - SCOPUS:0033363099

SN - 1350-4495

VL - 40

SP - 411

EP - 415

JO - Infrared Physics and Technology

JF - Infrared Physics and Technology

IS - 5

ER -

Effects of Te precipitation on IR transmittance and crystalline quality of as-grown CdZnTe crystals

Abstract

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