Effects of substrate temperature on the dielectric function of ZnO films

Y. Q. Gao; J. H. Ma; Z. M. Huang; Y. Hou; J. Wu; J. H. Chu

doi:10.1007/s00339-009-5452-3

Effects of substrate temperature on the dielectric function of ZnO films

Y. Q. Gao, J. H. Ma, Z. M. Huang, Y. Hou, J. Wu, J. H. Chu

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

ZnO films were deposited by RF magnetron sputtering at the substrate temperature of 120 420°C. XRD measurements revealed the improvement of crystalline quality and grain size of the films with substrate temperature. The dielectric function of the films was determined by fitting the experimental transmission spectra with Tauc-Lorentz (TL) model and a single Lorentzian oscillator (SLO) dispersion function in the energy range of 15 eV. The optical properties of the ZnO films strongly depended on the substrate temperature. The optical band gap and the Penn gap of the ZnO films increased with the substrate temperature. The band gap of the ZnO films indicated a direct interband transition between the valence and conduction band, and the change of the in-plane film stress promoted the enhancement of the band gap. These results of the optical properties of the ZnO films might be very meaningful to the application in the window design in solar cells.

Original language	English
Pages (from-to)	129-134
Number of pages	6
Journal	Applied Physics A: Materials Science and Processing
Volume	98
Issue number	1
DOIs	https://doi.org/10.1007/s00339-009-5452-3
State	Published - Jan 2010
Externally published	Yes

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T1 - Effects of substrate temperature on the dielectric function of ZnO films

AU - Gao, Y. Q.

AU - Ma, J. H.

AU - Huang, Z. M.

AU - Hou, Y.

AU - Wu, J.

AU - Chu, J. H.

PY - 2010/1

Y1 - 2010/1

N2 - ZnO films were deposited by RF magnetron sputtering at the substrate temperature of 120 420°C. XRD measurements revealed the improvement of crystalline quality and grain size of the films with substrate temperature. The dielectric function of the films was determined by fitting the experimental transmission spectra with Tauc-Lorentz (TL) model and a single Lorentzian oscillator (SLO) dispersion function in the energy range of 15 eV. The optical properties of the ZnO films strongly depended on the substrate temperature. The optical band gap and the Penn gap of the ZnO films increased with the substrate temperature. The band gap of the ZnO films indicated a direct interband transition between the valence and conduction band, and the change of the in-plane film stress promoted the enhancement of the band gap. These results of the optical properties of the ZnO films might be very meaningful to the application in the window design in solar cells.

AB - ZnO films were deposited by RF magnetron sputtering at the substrate temperature of 120 420°C. XRD measurements revealed the improvement of crystalline quality and grain size of the films with substrate temperature. The dielectric function of the films was determined by fitting the experimental transmission spectra with Tauc-Lorentz (TL) model and a single Lorentzian oscillator (SLO) dispersion function in the energy range of 15 eV. The optical properties of the ZnO films strongly depended on the substrate temperature. The optical band gap and the Penn gap of the ZnO films increased with the substrate temperature. The band gap of the ZnO films indicated a direct interband transition between the valence and conduction band, and the change of the in-plane film stress promoted the enhancement of the band gap. These results of the optical properties of the ZnO films might be very meaningful to the application in the window design in solar cells.

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Effects of substrate temperature on the dielectric function of ZnO films

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