Effects of rapid thermal annealing on aluminum nitride waveguides

Xinyao Wu; Jijun Feng; Xiaoteng Liu; Heping Zeng

doi:10.1364/OME.410129

Effects of rapid thermal annealing on aluminum nitride waveguides

Xinyao Wu
, Jijun Feng^*
, Xiaoteng Liu
, Heping Zeng

^*Corresponding author for this work

Institute for Advanced Study in Precision Spectroscopy

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The effects of rapid thermal annealing (RTA) on aluminum nitride (AlN) waveguides were investigated. For the AlN prepared by the sputtering, high temperature annealing for too long time may deteriorate the device performance, while a 6-7 times RTA with a 60 s annealing at a temperature of 800 °C would result in a lowest waveguide loss of about 0.76 dB/cm. After annealing, self-pumped four-wave mixing was performed on an 800-nm-wide, 5.8-mm-long waveguide. With a pump beam launched into the waveguide, signal and idler sidebands can be generated, which shows that RTA assisted sputtering grown AlN can have a potential to be applied for optical frequency comb generation.

Original language	English
Pages (from-to)	3073-3080
Number of pages	8
Journal	Optical Materials Express
Volume	10
Issue number	12
DOIs	https://doi.org/10.1364/OME.410129
State	Published - 1 Dec 2020

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title = "Effects of rapid thermal annealing on aluminum nitride waveguides",

abstract = "The effects of rapid thermal annealing (RTA) on aluminum nitride (AlN) waveguides were investigated. For the AlN prepared by the sputtering, high temperature annealing for too long time may deteriorate the device performance, while a 6-7 times RTA with a 60 s annealing at a temperature of 800 °C would result in a lowest waveguide loss of about 0.76 dB/cm. After annealing, self-pumped four-wave mixing was performed on an 800-nm-wide, 5.8-mm-long waveguide. With a pump beam launched into the waveguide, signal and idler sidebands can be generated, which shows that RTA assisted sputtering grown AlN can have a potential to be applied for optical frequency comb generation.",

author = "Xinyao Wu and Jijun Feng and Xiaoteng Liu and Heping Zeng",

note = "Publisher Copyright: {\textcopyright} 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.",

year = "2020",

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doi = "10.1364/OME.410129",

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T1 - Effects of rapid thermal annealing on aluminum nitride waveguides

AU - Wu, Xinyao

AU - Feng, Jijun

AU - Liu, Xiaoteng

AU - Zeng, Heping

PY - 2020/12/1

Y1 - 2020/12/1

N2 - The effects of rapid thermal annealing (RTA) on aluminum nitride (AlN) waveguides were investigated. For the AlN prepared by the sputtering, high temperature annealing for too long time may deteriorate the device performance, while a 6-7 times RTA with a 60 s annealing at a temperature of 800 °C would result in a lowest waveguide loss of about 0.76 dB/cm. After annealing, self-pumped four-wave mixing was performed on an 800-nm-wide, 5.8-mm-long waveguide. With a pump beam launched into the waveguide, signal and idler sidebands can be generated, which shows that RTA assisted sputtering grown AlN can have a potential to be applied for optical frequency comb generation.

AB - The effects of rapid thermal annealing (RTA) on aluminum nitride (AlN) waveguides were investigated. For the AlN prepared by the sputtering, high temperature annealing for too long time may deteriorate the device performance, while a 6-7 times RTA with a 60 s annealing at a temperature of 800 °C would result in a lowest waveguide loss of about 0.76 dB/cm. After annealing, self-pumped four-wave mixing was performed on an 800-nm-wide, 5.8-mm-long waveguide. With a pump beam launched into the waveguide, signal and idler sidebands can be generated, which shows that RTA assisted sputtering grown AlN can have a potential to be applied for optical frequency comb generation.

UR - https://www.scopus.com/pages/publications/85109793468

U2 - 10.1364/OME.410129

DO - 10.1364/OME.410129

M3 - 文章

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SN - 2159-3930

VL - 10

SP - 3073

EP - 3080

JO - Optical Materials Express

JF - Optical Materials Express

IS - 12

ER -

Effects of rapid thermal annealing on aluminum nitride waveguides

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