@inproceedings{651185a73e45419a9df60bec394bea34,
title = "Effects of post annealing on structural, electrical and optical properties of ZnO:Al thin films prepared by RF magnetron sputtering",
abstract = "Al doped ZnO (ZnO:Al, AZO) thin films were deposited on ordinary soda-lime glass (SLG) substrates by RF magnetron sputtering. Effects of post annealing (300\textasciitilde{}600 °C for 2\textasciitilde{}30 min in air and N2, respectively) were studied. All the films were wurtzite structure with highly c-axis preferential orientation. Their electrical properties were relatively stable at the post annealing temperature of 300 °C. As the temperature further increasing, post annealing in air leaded to drastic degradation in the electrical properties, while that in N2 had relatively small influence. Diffusion of alkali ions from SLG substrates was deduced to be one of the influence factors for electrical properties. The spectra measurements showed that the post annealing mainly affected the transmittance in the near-infrared and infrared (NIR-IR) range and the optical band gap (Eg). The variation of Eg was attributed to the Burstein-Moss (BM) shift modulated by many-body effects.",
keywords = "Electrical properties, Optical properties, Post annealing, ZnO:Al (AZO) thin films",
author = "Jianhua Ma and Yan Liang and Niangjuan Yao and Xiaojing Zhu and Jinchun Jiang and Junhao Chu",
year = "2013",
doi = "10.1117/12.2053632",
language = "英语",
isbn = "9780819499974",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Eighth International Conference on Thin Film Physics and Applications",
note = "8th International Conference on Thin Film Physics and Applications, TFPA 2013 ; Conference date: 20-09-2013 Through 23-09-2013",
}