Effects of oxygen pressure on the microstructural, ferroelectric and magnetic properties of BiFe0.95Mn0.05O3 thin films grown on Si substrates

W. Wang; Q. X. Zhu; M. M. Yang; R. K. Zheng; X. M. Li

doi:10.1007/s10854-014-1819-0

Effects of oxygen pressure on the microstructural, ferroelectric and magnetic properties of BiFe_0.95Mn_0.05O₃ thin films grown on Si substrates

W. Wang, Q. X. Zhu, M. M. Yang, R. K. Zheng, X. M. Li

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We have investigated the effects of oxygen pressure on the microstructure, leakage current, ferroelectric and magnetic properties of BiFe _0.95Mn_0.05O₃ (BFMO) thin films epitaxially grown on SrRuO₃, SrTiO₃, and TiN-buffered (001)-oriented Si substrates. X-ray diffraction θ-2θ scans and scanning electron microscope images reveal that the epitaxy and microstructures of the BFMO films were strongly dependent on oxygen pressure during film deposition. Epitaxial BFMO films can be obtained in a low oxygen pressure of 2 Pa while polycrystalline BFMO films were obtained in a relatively high oxygen pressure of 15 Pa. Furthermore, the oxygen pressure strongly influences the ferroelectric properties of the BFMO films grown on Si. The remnant polarization (2P _r) of approximately 107 μC/cm² and coercive field (2E _c) of approximately 580 kV/cm were observed for the epitaxial BFMO films grown in a low oxygen pressure of 2 Pa. The saturation magnetization of the BFMO films decreases with increasing oxygen pressure while the magnetic coercive field remains unchanged.

Original language	English
Pages (from-to)	1908-1914
Number of pages	7
Journal	Journal of Materials Science: Materials in Electronics
Volume	25
Issue number	4
DOIs	https://doi.org/10.1007/s10854-014-1819-0
State	Published - Apr 2014
Externally published	Yes

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title = "Effects of oxygen pressure on the microstructural, ferroelectric and magnetic properties of BiFe0.95Mn0.05O3 thin films grown on Si substrates",

abstract = "We have investigated the effects of oxygen pressure on the microstructure, leakage current, ferroelectric and magnetic properties of BiFe 0.95Mn0.05O3 (BFMO) thin films epitaxially grown on SrRuO3, SrTiO3, and TiN-buffered (001)-oriented Si substrates. X-ray diffraction θ-2θ scans and scanning electron microscope images reveal that the epitaxy and microstructures of the BFMO films were strongly dependent on oxygen pressure during film deposition. Epitaxial BFMO films can be obtained in a low oxygen pressure of 2 Pa while polycrystalline BFMO films were obtained in a relatively high oxygen pressure of 15 Pa. Furthermore, the oxygen pressure strongly influences the ferroelectric properties of the BFMO films grown on Si. The remnant polarization (2P r) of approximately 107 μC/cm2 and coercive field (2E c) of approximately 580 kV/cm were observed for the epitaxial BFMO films grown in a low oxygen pressure of 2 Pa. The saturation magnetization of the BFMO films decreases with increasing oxygen pressure while the magnetic coercive field remains unchanged.",

author = "W. Wang and Zhu, \{Q. X.\} and Yang, \{M. M.\} and Zheng, \{R. K.\} and Li, \{X. M.\}",

year = "2014",

month = apr,

doi = "10.1007/s10854-014-1819-0",

language = "英语",

volume = "25",

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journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer New York",

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TY - JOUR

T1 - Effects of oxygen pressure on the microstructural, ferroelectric and magnetic properties of BiFe0.95Mn0.05O3 thin films grown on Si substrates

AU - Wang, W.

AU - Zhu, Q. X.

AU - Yang, M. M.

AU - Zheng, R. K.

AU - Li, X. M.

PY - 2014/4

Y1 - 2014/4

N2 - We have investigated the effects of oxygen pressure on the microstructure, leakage current, ferroelectric and magnetic properties of BiFe 0.95Mn0.05O3 (BFMO) thin films epitaxially grown on SrRuO3, SrTiO3, and TiN-buffered (001)-oriented Si substrates. X-ray diffraction θ-2θ scans and scanning electron microscope images reveal that the epitaxy and microstructures of the BFMO films were strongly dependent on oxygen pressure during film deposition. Epitaxial BFMO films can be obtained in a low oxygen pressure of 2 Pa while polycrystalline BFMO films were obtained in a relatively high oxygen pressure of 15 Pa. Furthermore, the oxygen pressure strongly influences the ferroelectric properties of the BFMO films grown on Si. The remnant polarization (2P r) of approximately 107 μC/cm2 and coercive field (2E c) of approximately 580 kV/cm were observed for the epitaxial BFMO films grown in a low oxygen pressure of 2 Pa. The saturation magnetization of the BFMO films decreases with increasing oxygen pressure while the magnetic coercive field remains unchanged.

AB - We have investigated the effects of oxygen pressure on the microstructure, leakage current, ferroelectric and magnetic properties of BiFe 0.95Mn0.05O3 (BFMO) thin films epitaxially grown on SrRuO3, SrTiO3, and TiN-buffered (001)-oriented Si substrates. X-ray diffraction θ-2θ scans and scanning electron microscope images reveal that the epitaxy and microstructures of the BFMO films were strongly dependent on oxygen pressure during film deposition. Epitaxial BFMO films can be obtained in a low oxygen pressure of 2 Pa while polycrystalline BFMO films were obtained in a relatively high oxygen pressure of 15 Pa. Furthermore, the oxygen pressure strongly influences the ferroelectric properties of the BFMO films grown on Si. The remnant polarization (2P r) of approximately 107 μC/cm2 and coercive field (2E c) of approximately 580 kV/cm were observed for the epitaxial BFMO films grown in a low oxygen pressure of 2 Pa. The saturation magnetization of the BFMO films decreases with increasing oxygen pressure while the magnetic coercive field remains unchanged.

UR - https://www.scopus.com/pages/publications/84897091644

U2 - 10.1007/s10854-014-1819-0

DO - 10.1007/s10854-014-1819-0

M3 - 文章

AN - SCOPUS:84897091644

SN - 0957-4522

VL - 25

SP - 1908

EP - 1914

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 4

ER -

Effects of oxygen pressure on the microstructural, ferroelectric and magnetic properties of BiFe_0.95Mn_0.05O₃ thin films grown on Si substrates

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