TY - JOUR
T1 - Effects of gold nanoparticles on pentacene organic field-effect transistors
AU - Lee, Keanchuan
AU - Weis, Martin
AU - Ou-Yang, Wei
AU - Taguchi, Dai
AU - Manaka, Takaaki
AU - Iwamoto, Mitsumasa
PY - 2011/4
Y1 - 2011/4
N2 - The effect of gold nanoparticles (NPs) on pentacene organic field-effect transistors (OFETs) was being investigated by both DC and AC methods, which are current-voltage (I-V) measurements in steady-state and impedance spectroscopy (IS) respectively. Here poly(vinyl alcohol) (PVA) and PVA blended with Au NPs as composite are spin-coated on SiO2 as gate-insulator for top-contact pentacene OFET. The characteristics of the device were being investigated based on the contact resistance, trapped charges, effective mobility and threshold voltage based on transfer characteristics of OFET. Results revealed that OFET with NPs exhibited larger hysteresis and higher contact resistance at high voltage region. IS measurements were performed and the fitting of results by the Maxwell-Wagner equivalent circuit showed that for device with NPs a series of capacitance and resistance which represents trapping must be introduced in order to have agreeable fitting. The fitting had helped to clarify the reason behind the higher contact resistance and bigger hysteresis which was mainly caused by the space charge field formed by the traps when Au NPs were introduced into the device.
AB - The effect of gold nanoparticles (NPs) on pentacene organic field-effect transistors (OFETs) was being investigated by both DC and AC methods, which are current-voltage (I-V) measurements in steady-state and impedance spectroscopy (IS) respectively. Here poly(vinyl alcohol) (PVA) and PVA blended with Au NPs as composite are spin-coated on SiO2 as gate-insulator for top-contact pentacene OFET. The characteristics of the device were being investigated based on the contact resistance, trapped charges, effective mobility and threshold voltage based on transfer characteristics of OFET. Results revealed that OFET with NPs exhibited larger hysteresis and higher contact resistance at high voltage region. IS measurements were performed and the fitting of results by the Maxwell-Wagner equivalent circuit showed that for device with NPs a series of capacitance and resistance which represents trapping must be introduced in order to have agreeable fitting. The fitting had helped to clarify the reason behind the higher contact resistance and bigger hysteresis which was mainly caused by the space charge field formed by the traps when Au NPs were introduced into the device.
UR - https://www.scopus.com/pages/publications/79955150419
U2 - 10.1143/JJAP.50.041601
DO - 10.1143/JJAP.50.041601
M3 - 文章
AN - SCOPUS:79955150419
SN - 0021-4922
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 4 PART 1
M1 - 041601
ER -