Effects of ferroelectric/metal interface on the electric properties of PMN-PT thin films epitaxially grown on Si substrates

W. Wang; Q. X. Zhu; X. M. Li; M. M. Yang; X. D. Gao; X. Q. Zhao

doi:10.1007/s10854-013-1318-8

Effects of ferroelectric/metal interface on the electric properties of PMN-PT thin films epitaxially grown on Si substrates

W. Wang
, Q. X. Zhu
, X. M. Li^*
, M. M. Yang
, X. D. Gao
, X. Q. Zhao

^*Corresponding author for this work

CAS - Shanghai Institute of Ceramics
University of Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Lead magnesium niobate-lead titanate 0.72Pb(Mg_1/3Nb _2/3)O₃-0.28PbTiO₃ (PMN-PT) ferroelectric thin films were deposited on SrRuO₃ (SRO), SrTiO₃, and TiN-buffered Si substrates by pulsed laser deposition. X-ray diffraction θ-2θ and Phi scans reveal that PMN-PT films were epitaxially grown on Si substrates. Pt, Al, and Gd metals were employed as top electrodes to investigate the ferroelectric and dielectric properties of these metal/PMN-PT/SRO capacitors. It was found that the coercive field (E _C) of the Gd(or Al)/PMN-PT/SRO capacitor is 4.5 times larger than that of the Pt/PMN-PT/SRO capacitor while the permittivity for the former is only ~27 % of that for the latter, which is analyzed using the model for metal-ferroelectric-metal heterostructures with Schottky contacts. Compared with the Pt/PMN-PT/SRO capacitor, the higher E _C and lower permittivity of the Gd(or Al)/PMN-PT/SRO capacitor are attributed to the stronger space charge field at the Gd(or Al)/PMN-PT interface. The capacitance-voltage characteristics of the metal/PMN-PT/SRO capacitors were also discussed.

Original language	English
Pages (from-to)	3782-3787
Number of pages	6
Journal	Journal of Materials Science: Materials in Electronics
Volume	24
Issue number	10
DOIs	https://doi.org/10.1007/s10854-013-1318-8
State	Published - Oct 2013
Externally published	Yes

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@article{ca637879548641b68ccb077f19f962ae,

title = "Effects of ferroelectric/metal interface on the electric properties of PMN-PT thin films epitaxially grown on Si substrates",

abstract = "Lead magnesium niobate-lead titanate 0.72Pb(Mg1/3Nb 2/3)O3-0.28PbTiO3 (PMN-PT) ferroelectric thin films were deposited on SrRuO3 (SRO), SrTiO3, and TiN-buffered Si substrates by pulsed laser deposition. X-ray diffraction θ-2θ and Phi scans reveal that PMN-PT films were epitaxially grown on Si substrates. Pt, Al, and Gd metals were employed as top electrodes to investigate the ferroelectric and dielectric properties of these metal/PMN-PT/SRO capacitors. It was found that the coercive field (E C) of the Gd(or Al)/PMN-PT/SRO capacitor is 4.5 times larger than that of the Pt/PMN-PT/SRO capacitor while the permittivity for the former is only \textasciitilde{}27 \% of that for the latter, which is analyzed using the model for metal-ferroelectric-metal heterostructures with Schottky contacts. Compared with the Pt/PMN-PT/SRO capacitor, the higher E C and lower permittivity of the Gd(or Al)/PMN-PT/SRO capacitor are attributed to the stronger space charge field at the Gd(or Al)/PMN-PT interface. The capacitance-voltage characteristics of the metal/PMN-PT/SRO capacitors were also discussed.",

author = "W. Wang and Zhu, \{Q. X.\} and Li, \{X. M.\} and Yang, \{M. M.\} and Gao, \{X. D.\} and Zhao, \{X. Q.\}",

year = "2013",

month = oct,

doi = "10.1007/s10854-013-1318-8",

language = "英语",

volume = "24",

pages = "3782--3787",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer New York",

number = "10",

}

TY - JOUR

T1 - Effects of ferroelectric/metal interface on the electric properties of PMN-PT thin films epitaxially grown on Si substrates

AU - Wang, W.

AU - Zhu, Q. X.

AU - Li, X. M.

AU - Yang, M. M.

AU - Gao, X. D.

AU - Zhao, X. Q.

PY - 2013/10

Y1 - 2013/10

N2 - Lead magnesium niobate-lead titanate 0.72Pb(Mg1/3Nb 2/3)O3-0.28PbTiO3 (PMN-PT) ferroelectric thin films were deposited on SrRuO3 (SRO), SrTiO3, and TiN-buffered Si substrates by pulsed laser deposition. X-ray diffraction θ-2θ and Phi scans reveal that PMN-PT films were epitaxially grown on Si substrates. Pt, Al, and Gd metals were employed as top electrodes to investigate the ferroelectric and dielectric properties of these metal/PMN-PT/SRO capacitors. It was found that the coercive field (E C) of the Gd(or Al)/PMN-PT/SRO capacitor is 4.5 times larger than that of the Pt/PMN-PT/SRO capacitor while the permittivity for the former is only ~27 % of that for the latter, which is analyzed using the model for metal-ferroelectric-metal heterostructures with Schottky contacts. Compared with the Pt/PMN-PT/SRO capacitor, the higher E C and lower permittivity of the Gd(or Al)/PMN-PT/SRO capacitor are attributed to the stronger space charge field at the Gd(or Al)/PMN-PT interface. The capacitance-voltage characteristics of the metal/PMN-PT/SRO capacitors were also discussed.

AB - Lead magnesium niobate-lead titanate 0.72Pb(Mg1/3Nb 2/3)O3-0.28PbTiO3 (PMN-PT) ferroelectric thin films were deposited on SrRuO3 (SRO), SrTiO3, and TiN-buffered Si substrates by pulsed laser deposition. X-ray diffraction θ-2θ and Phi scans reveal that PMN-PT films were epitaxially grown on Si substrates. Pt, Al, and Gd metals were employed as top electrodes to investigate the ferroelectric and dielectric properties of these metal/PMN-PT/SRO capacitors. It was found that the coercive field (E C) of the Gd(or Al)/PMN-PT/SRO capacitor is 4.5 times larger than that of the Pt/PMN-PT/SRO capacitor while the permittivity for the former is only ~27 % of that for the latter, which is analyzed using the model for metal-ferroelectric-metal heterostructures with Schottky contacts. Compared with the Pt/PMN-PT/SRO capacitor, the higher E C and lower permittivity of the Gd(or Al)/PMN-PT/SRO capacitor are attributed to the stronger space charge field at the Gd(or Al)/PMN-PT interface. The capacitance-voltage characteristics of the metal/PMN-PT/SRO capacitors were also discussed.

UR - https://www.scopus.com/pages/publications/84890046928

U2 - 10.1007/s10854-013-1318-8

DO - 10.1007/s10854-013-1318-8

M3 - 文章

AN - SCOPUS:84890046928

SN - 0957-4522

VL - 24

SP - 3782

EP - 3787

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 10

ER -

Effects of ferroelectric/metal interface on the electric properties of PMN-PT thin films epitaxially grown on Si substrates

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