Effects of ferroelectric polarization switching on the electronic transport and magnetic properties of La0.8Ce0.2MnO3 epitaxial thin films

Q. X. Zhu; M. Zheng; W. Wang; M. M. Yang; Y. Wang; X. M. Li; H. S. Luo; H. L.W. Chan; X. G. Li; R. K. Zheng

doi:10.1063/1.4817080

Effects of ferroelectric polarization switching on the electronic transport and magnetic properties of La_0.8Ce_0.2MnO₃ epitaxial thin films

Q. X. Zhu
, M. Zheng
, W. Wang
, M. M. Yang
, Y. Wang
, X. M. Li
, H. S. Luo
, H. L.W. Chan
, X. G. Li
, R. K. Zheng

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The authors report the electronic transport and magnetic properties of the La_0.8Ce_0.2MnO₃ (LCEMO) thin film epitaxially grown on the ferroelectric 0.67Pb(Mg_1/3Nb_2/3)O ₃-0.33PbTiO₃ (PMN-PT) single-crystal substrate and their dependence on the polarization state of the PMN-PT substrate. Upon electric-field-induced polarization switching, the electrical resistance and magnetization of the LCEMO film were modulated reversibly. The underlying coupling mechanism that is responsible for the electric-field-control of the resistance and magnetization strongly depends on temperature, being strain-mediated type at relatively high temperatures but becoming charge-mediated type with decreasing temperature. The knowledge about the evolution of the coupling mechanism with temperature not only helps to understand the drive force for multiferroic properties but also is important for theoretical modeling and device fabrication.

Original language	English
Article number	073904
Journal	Journal of Applied Physics
Volume	114
Issue number	7
DOIs	https://doi.org/10.1063/1.4817080
State	Published - 21 Aug 2013
Externally published	Yes

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10.1063/1.4817080

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@article{3c963bdcf063403cbe76b251a739c577,

title = "Effects of ferroelectric polarization switching on the electronic transport and magnetic properties of La0.8Ce0.2MnO3 epitaxial thin films",

abstract = "The authors report the electronic transport and magnetic properties of the La0.8Ce0.2MnO3 (LCEMO) thin film epitaxially grown on the ferroelectric 0.67Pb(Mg1/3Nb2/3)O 3-0.33PbTiO3 (PMN-PT) single-crystal substrate and their dependence on the polarization state of the PMN-PT substrate. Upon electric-field-induced polarization switching, the electrical resistance and magnetization of the LCEMO film were modulated reversibly. The underlying coupling mechanism that is responsible for the electric-field-control of the resistance and magnetization strongly depends on temperature, being strain-mediated type at relatively high temperatures but becoming charge-mediated type with decreasing temperature. The knowledge about the evolution of the coupling mechanism with temperature not only helps to understand the drive force for multiferroic properties but also is important for theoretical modeling and device fabrication.",

author = "Zhu, \{Q. X.\} and M. Zheng and W. Wang and Yang, \{M. M.\} and Y. Wang and Li, \{X. M.\} and Luo, \{H. S.\} and Chan, \{H. L.W.\} and Li, \{X. G.\} and Zheng, \{R. K.\}",

year = "2013",

month = aug,

day = "21",

doi = "10.1063/1.4817080",

language = "英语",

volume = "114",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Effects of ferroelectric polarization switching on the electronic transport and magnetic properties of La0.8Ce0.2MnO3 epitaxial thin films

AU - Zhu, Q. X.

AU - Zheng, M.

AU - Wang, W.

AU - Yang, M. M.

AU - Wang, Y.

AU - Li, X. M.

AU - Luo, H. S.

AU - Chan, H. L.W.

AU - Li, X. G.

AU - Zheng, R. K.

PY - 2013/8/21

Y1 - 2013/8/21

N2 - The authors report the electronic transport and magnetic properties of the La0.8Ce0.2MnO3 (LCEMO) thin film epitaxially grown on the ferroelectric 0.67Pb(Mg1/3Nb2/3)O 3-0.33PbTiO3 (PMN-PT) single-crystal substrate and their dependence on the polarization state of the PMN-PT substrate. Upon electric-field-induced polarization switching, the electrical resistance and magnetization of the LCEMO film were modulated reversibly. The underlying coupling mechanism that is responsible for the electric-field-control of the resistance and magnetization strongly depends on temperature, being strain-mediated type at relatively high temperatures but becoming charge-mediated type with decreasing temperature. The knowledge about the evolution of the coupling mechanism with temperature not only helps to understand the drive force for multiferroic properties but also is important for theoretical modeling and device fabrication.

AB - The authors report the electronic transport and magnetic properties of the La0.8Ce0.2MnO3 (LCEMO) thin film epitaxially grown on the ferroelectric 0.67Pb(Mg1/3Nb2/3)O 3-0.33PbTiO3 (PMN-PT) single-crystal substrate and their dependence on the polarization state of the PMN-PT substrate. Upon electric-field-induced polarization switching, the electrical resistance and magnetization of the LCEMO film were modulated reversibly. The underlying coupling mechanism that is responsible for the electric-field-control of the resistance and magnetization strongly depends on temperature, being strain-mediated type at relatively high temperatures but becoming charge-mediated type with decreasing temperature. The knowledge about the evolution of the coupling mechanism with temperature not only helps to understand the drive force for multiferroic properties but also is important for theoretical modeling and device fabrication.

UR - https://www.scopus.com/pages/publications/84883280235

U2 - 10.1063/1.4817080

DO - 10.1063/1.4817080

M3 - 文章

AN - SCOPUS:84883280235

SN - 0021-8979

VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

M1 - 073904

ER -

Effects of ferroelectric polarization switching on the electronic transport and magnetic properties of La_0.8Ce_0.2MnO₃ epitaxial thin films

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