Effects of excess Pb on structural and electrical properties of Pb(Zr0.48Ti0.52)O3 thin films using MOD process

Zhitang Song; Jianxia Gao; Xiangrong Zhu; Lianwei Wang; Xiaorong Fu; Chenglu Lin

doi:10.1023/A:1017999223329

Effects of excess Pb on structural and electrical properties of Pb(Zr_0.48Ti_0.52)O₃ thin films using MOD process

Zhitang Song, Jianxia Gao, Xiangrong Zhu, Lianwei Wang, Xiaorong Fu, Chenglu Lin

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Pb(Zr_0.48Ti_0.52)O₃ thin films at 20% excess Pb were synthesized on Pt/Ti/SiO₂/Si(100) substrates at different annealing temperatures by a metal-organic decomposition process. The microstructure of the PZT films was investigated by x-ray diffraction and atomic force microscopy. The composition of the films was characterized by Rutherford Backscattering Spectroscopy (RBS). These results showed that The PZT films have perovskite phase coexisted with PbO₂ phase. The PbO₂ phase mainly was formed by excess Pb which congregate at boundaries of crystalline grains during the annealing process and may be absorbed part of oxygen ion at normal sites, thus leading to an increase of oxygen vacancies in the PZT film. PbO₂ phase and oxygen vacancies act as pinning centres, which has an effect on the ferroelectric domain switching. This eventually resulted in an increase of fatigue rate in PZT films.

Original language	English
Pages (from-to)	4285-4289
Number of pages	5
Journal	Journal of Materials Science
Volume	36
Issue number	17
DOIs	https://doi.org/10.1023/A:1017999223329
State	Published - 1 Sep 2001
Externally published	Yes

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title = "Effects of excess Pb on structural and electrical properties of Pb(Zr0.48Ti0.52)O3 thin films using MOD process",

abstract = "Pb(Zr0.48Ti0.52)O3 thin films at 20\% excess Pb were synthesized on Pt/Ti/SiO2/Si(100) substrates at different annealing temperatures by a metal-organic decomposition process. The microstructure of the PZT films was investigated by x-ray diffraction and atomic force microscopy. The composition of the films was characterized by Rutherford Backscattering Spectroscopy (RBS). These results showed that The PZT films have perovskite phase coexisted with PbO2 phase. The PbO2 phase mainly was formed by excess Pb which congregate at boundaries of crystalline grains during the annealing process and may be absorbed part of oxygen ion at normal sites, thus leading to an increase of oxygen vacancies in the PZT film. PbO2 phase and oxygen vacancies act as pinning centres, which has an effect on the ferroelectric domain switching. This eventually resulted in an increase of fatigue rate in PZT films.",

author = "Zhitang Song and Jianxia Gao and Xiangrong Zhu and Lianwei Wang and Xiaorong Fu and Chenglu Lin",

year = "2001",

month = sep,

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doi = "10.1023/A:1017999223329",

language = "英语",

volume = "36",

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journal = "Journal of Materials Science",

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TY - JOUR

T1 - Effects of excess Pb on structural and electrical properties of Pb(Zr0.48Ti0.52)O3 thin films using MOD process

AU - Song, Zhitang

AU - Gao, Jianxia

AU - Zhu, Xiangrong

AU - Wang, Lianwei

AU - Fu, Xiaorong

AU - Lin, Chenglu

PY - 2001/9/1

Y1 - 2001/9/1

N2 - Pb(Zr0.48Ti0.52)O3 thin films at 20% excess Pb were synthesized on Pt/Ti/SiO2/Si(100) substrates at different annealing temperatures by a metal-organic decomposition process. The microstructure of the PZT films was investigated by x-ray diffraction and atomic force microscopy. The composition of the films was characterized by Rutherford Backscattering Spectroscopy (RBS). These results showed that The PZT films have perovskite phase coexisted with PbO2 phase. The PbO2 phase mainly was formed by excess Pb which congregate at boundaries of crystalline grains during the annealing process and may be absorbed part of oxygen ion at normal sites, thus leading to an increase of oxygen vacancies in the PZT film. PbO2 phase and oxygen vacancies act as pinning centres, which has an effect on the ferroelectric domain switching. This eventually resulted in an increase of fatigue rate in PZT films.

AB - Pb(Zr0.48Ti0.52)O3 thin films at 20% excess Pb were synthesized on Pt/Ti/SiO2/Si(100) substrates at different annealing temperatures by a metal-organic decomposition process. The microstructure of the PZT films was investigated by x-ray diffraction and atomic force microscopy. The composition of the films was characterized by Rutherford Backscattering Spectroscopy (RBS). These results showed that The PZT films have perovskite phase coexisted with PbO2 phase. The PbO2 phase mainly was formed by excess Pb which congregate at boundaries of crystalline grains during the annealing process and may be absorbed part of oxygen ion at normal sites, thus leading to an increase of oxygen vacancies in the PZT film. PbO2 phase and oxygen vacancies act as pinning centres, which has an effect on the ferroelectric domain switching. This eventually resulted in an increase of fatigue rate in PZT films.

UR - https://www.scopus.com/pages/publications/0035446391

U2 - 10.1023/A:1017999223329

DO - 10.1023/A:1017999223329

M3 - 文章

AN - SCOPUS:0035446391

SN - 0022-2461

VL - 36

SP - 4285

EP - 4289

JO - Journal of Materials Science

JF - Journal of Materials Science

IS - 17

ER -

Effects of excess Pb on structural and electrical properties of Pb(Zr_0.48Ti_0.52)O₃ thin films using MOD process

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