Effects of electrodes on antiferroelectricity and fatigue endurance of Hf0.2Zr0.8O2 thin films

Dawei Li, Hongbo Liu, Luqiu Chen, Yu Shen, Guangdi Feng, Shenglan Hao, Zhenzhong Yang, Qiuxiang Zhu, Ke Qu, Bobo Tian, Junhao Chu, Chungang Duan

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The influence of electrodes on antiferroelectricity and fatigue endurance of 15 nm thick Hf0.2Zr0.8O2 thin films has been studied by a metal-antiferroelectric-metal capacitor structure using TiN and W as electrodes. The W|Hf0.2Zr0.8O2|W capacitor shows significantly enhanced antiferroelectricity and better endurance compared to the capacitor using TiN as the electrode. Assisted by grazing incidence x-ray diffraction and scanning transmission electron microscopy, the different electrical properties are discussed based on the contents of different phases and the diffusion of oxygen from the thin film into electrodes.

Original languageEnglish
Article number132903
JournalApplied Physics Letters
Volume124
Issue number13
DOIs
StatePublished - 25 Mar 2024

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