Effects of boron implanted dose on the diffusion length of minority carriers in HgCdTe n-on-p junction

The line scan and mapping profiles of a series of HgCdTe n-on-p junctions with different boron implantation dose have been measured by laser beam induced current. The n-type region is larger than the actually boron-implanted area. The minority carrier diffusion length both inside and outside at p-n junction boundary can be extracted from the LBIC line scan profile. The response enhancement for the small optically sensitive area devices is due to enlarging the n-type area and carriers collecting effect on the external side.