Effects of annealing temperature and time on the structure and ferroelectricity of sol-gel-derived Ba0.8Sr0.2TiO3 thin films from highly diluted precursor solutions

  • Jian Gong Cheng
  • , Jun Tang
  • , Shaoling Guo
  • , Junhao Chu

Research output: Contribution to journalConference articlepeer-review

Abstract

Ba0.8Sr0.2TiO3 thin films were prepared from a high dilute precursor solution by a sol-gel process using a layer-by-layer heat treatment method. The annealing temperature ranged from 600 to 700 degree(s)C and the annealing time ranged from 5 to 15 min. Analysis by X-ray diffraction, Raman spectroscopy and field emission scanning electron microscopy showed that the annealing temperature and time strongly affected the structure of the films. The crystallinity and grain size of the films increased with the annealing temperature increasing. The grain size of the films annealed at 700 degree(s)C increased from 80 to 200 nm when the annealing time increasing from 5 to 15 min, and the film annealed at 700 degree(s)C for 15 min showed a pure columnar structure. Electrical measurements showed the ferroelectricity of the films annealed at 700 degree(s)C became better with the annealing time increasing. The film annealed at 700 degree(s)C for 15 min showed a remnant polarization of 3.5 (mu) C/cm2 and a coercive field of 83 kV/cm.

Original languageEnglish
Pages (from-to)613-616
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4086
DOIs
StatePublished - 2000
Externally publishedYes
Event4th International Conference on Thin Film Physics and Applications - Shanghai, China
Duration: 8 May 200011 May 2000

Keywords

  • Ba0 8Sr0 2TiO3 thin films
  • Ferroelectricity
  • Sol-Gel Process
  • Structure

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