@inproceedings{a1a51d79178a46eeb4de6c7ce156973a,
title = "Effects of annealing on the structural properties of Cu(In,Ga)Se 2 thin films prepared by RF sputtering",
abstract = "Cu(In,Ga)Se2 (CIGS) thin films have been prepared by radio frequency (RF) magnetron sputtering from a CuIn0.8Ga 0.2Se2 target. The effects of in-situ annealing in Ar atmosphere on phase structure, composition and surface morphology of the films have been investigated by X-ray diffraction (XRD), energy dispersive analysis of X-rays (EDAX), atomic force microscopy (AFM) and Raman spectroscopy. XRD patterns show that both as-deposited and annealed films have a chalcopyrite structure with strong (112) preferred orientation. The annealed films display a higher degree of crystallinity and smoother surface, while there is little difference in grain size for films annealed at temperatures ranging from 300 °C to 500 °C. Results of EDAX reveal that the films are near to stoichiometry. Raman spectrum of the films annealed at 300 °C shows only the CIGS A1 mode peak indicating the formation of single-phase chalcopyrite with enhanced crystalline ordering. The films annealed at higher temperatures exhibit a non-chalcopyrite mode at around 260 cm-1 assigned to Cu 2-xSe secondary phase which is detrimental to CIGS solar cells.",
keywords = "Annealing, CIGS, RF sputtering, Raman spectra, Thin films",
author = "Gang Shi and Junhao Chu",
year = "2011",
doi = "10.1117/12.888168",
language = "英语",
isbn = "9780819485687",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Seventh International Conference on Thin Film Physics and Applications",
note = "7th International Conference on Thin Film Physics and Applications ; Conference date: 24-09-2010 Through 27-09-2010",
}