Abstract
Magnetotransport study has been performed on Alx Ga1-x NGaN heterostructures at low temperatures and high magnetic fields. Effective-mass values of the two-dimensional electron gas (2DEG) in the triangular quantum well at the heterointerfaces are obtained by analyzing the temperature-dependent Shubnikov-de Haas oscillations. It is found that the values have strong dependence on the magnetic field and the 2DEG density. Our results show that the effective mass increases 0.01 m0 T and 0.0027 m0 electron density of 1012 cm-2. Such behavior is thought to be due to the conduction band nonparabolicity in GaN. The extrapolated band edge effective mass of m0* = (0.145±0.006) m0 is obtained, which is smaller than most reports that neglected the influence of the magnetic field in Alx Ga1-x NGaN heterostructures.
| Original language | English |
|---|---|
| Article number | 172115 |
| Journal | Applied Physics Letters |
| Volume | 88 |
| Issue number | 17 |
| DOIs | |
| State | Published - 2006 |
| Externally published | Yes |