Effective g-factor in high-mobility InGaAs/InP quantum well

Lai Ming Wei; Yuan Ming Zhou; Guo Lin Yu; Kuang Hong Gao; Xin Zhi Liu; Tie Lin; Shao Ling Guo; Ning Dai; Jun Hao Chu; Austing David Guy

Effective g-factor in high-mobility InGaAs/InP quantum well

Lai Ming Wei, Yuan Ming Zhou, Guo Lin Yu, Kuang Hong Gao, Xin Zhi Liu, Tie Lin, Shao Ling Guo, Ning Dai, Jun Hao Chu, Austing David Guy

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

Abstract

High-mobility In _0.53Ga _0.47As/InP quantum well is fabricated by the chemical beam epitaxy technique. Clear Shubnikov-de Hass (SdH) oscillation and beating pattern due to zero-field spin splitting are observed by magnetotransport measurements at low temperature. We use an analytical method, involving the simultaneous fitting of fast Fourier transform spectra of SdH oscillations at different tilted fields, to extract the effective g-factor.

Original language	English
Article number	127102
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	61
Issue number	12
State	Published - 20 Jun 2012

Keywords

Magnetoresistance
Quantum well
g-factor

Cite this

@article{a4d9c22d644a4bcab5c86dfe9b8590f2,

title = "Effective g-factor in high-mobility InGaAs/InP quantum well",

abstract = "High-mobility In 0.53Ga 0.47As/InP quantum well is fabricated by the chemical beam epitaxy technique. Clear Shubnikov-de Hass (SdH) oscillation and beating pattern due to zero-field spin splitting are observed by magnetotransport measurements at low temperature. We use an analytical method, involving the simultaneous fitting of fast Fourier transform spectra of SdH oscillations at different tilted fields, to extract the effective g-factor.",

keywords = "Magnetoresistance, Quantum well, g-factor",

author = "Wei, \{Lai Ming\} and Zhou, \{Yuan Ming\} and Yu, \{Guo Lin\} and Gao, \{Kuang Hong\} and Liu, \{Xin Zhi\} and Tie Lin and Guo, \{Shao Ling\} and Ning Dai and Chu, \{Jun Hao\} and Guy, \{Austing David\}",

year = "2012",

month = jun,

day = "20",

language = "英语",

volume = "61",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Institute of Physics, Chinese Academy of Sciences",

number = "12",

}

TY - JOUR

T1 - Effective g-factor in high-mobility InGaAs/InP quantum well

AU - Wei, Lai Ming

AU - Zhou, Yuan Ming

AU - Yu, Guo Lin

AU - Gao, Kuang Hong

AU - Liu, Xin Zhi

AU - Lin, Tie

AU - Guo, Shao Ling

AU - Dai, Ning

AU - Chu, Jun Hao

AU - Guy, Austing David

PY - 2012/6/20

Y1 - 2012/6/20

N2 - High-mobility In 0.53Ga 0.47As/InP quantum well is fabricated by the chemical beam epitaxy technique. Clear Shubnikov-de Hass (SdH) oscillation and beating pattern due to zero-field spin splitting are observed by magnetotransport measurements at low temperature. We use an analytical method, involving the simultaneous fitting of fast Fourier transform spectra of SdH oscillations at different tilted fields, to extract the effective g-factor.

AB - High-mobility In 0.53Ga 0.47As/InP quantum well is fabricated by the chemical beam epitaxy technique. Clear Shubnikov-de Hass (SdH) oscillation and beating pattern due to zero-field spin splitting are observed by magnetotransport measurements at low temperature. We use an analytical method, involving the simultaneous fitting of fast Fourier transform spectra of SdH oscillations at different tilted fields, to extract the effective g-factor.

KW - Magnetoresistance

KW - Quantum well

KW - g-factor

UR - https://www.scopus.com/pages/publications/84863856477

M3 - 文章

AN - SCOPUS:84863856477

SN - 1000-3290

VL - 61

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 12

M1 - 127102

ER -

Effective g-factor in high-mobility InGaAs/InP quantum well

Abstract

Keywords

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