Effect of top electrodes on photovoltaic properties of polycrystalline BiFeO3 based thin film capacitors

Bin Chen; Mi Li; Yiwei Liu; Zhenghu Zuo; Fei Zhuge; Qing Feng Zhan; Run Wei Li

doi:10.1088/0957-4484/22/19/195201

Effect of top electrodes on photovoltaic properties of polycrystalline BiFeO₃ based thin film capacitors

Bin Chen, Mi Li, Yiwei Liu, Zhenghu Zuo, Fei Zhuge, Qing Feng Zhan, Run Wei Li

CAS - Ningbo Institute of Material Technology and Engineering

Research output: Contribution to journal › Article › peer-review

175 Scopus citations

Abstract

We investigated capacitors based on polycrystalline narrow-band-gap BiFeO₃ (BFO) thin films with different top electrodes. The photovoltaic response for the capacitor with a Sn-doped In₂O ₃ (ITO) top electrode is about 25 times higher than that with a Au top electrode, which indicates that the electrode plays a key role in determining the photovoltaic response of ferroelectric thin film capacitors, as simulated by Qin et al (2009 Appl. Phys. Lett. 95 22912). The light-to-electricity photovoltaic efficiency for the ITO/polycrystalline BFO/Pt capacitor can reach 0.125%. Furthermore, under incident light of 450νWcm ^-2 and zero bias, the corresponding photocurrent varies from 0.2 to 200pA, that is, almost a 1000-fold photoconductivity enhancement. Our experiments suggest that polycrystalline BFO films are promising materials for application in photo-sensitive and energy-related devices.

Original language	English
Article number	195201
Journal	Nanotechnology
Volume	22
Issue number	19
DOIs	https://doi.org/10.1088/0957-4484/22/19/195201
State	Published - 13 May 2011
Externally published	Yes

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10.1088/0957-4484/22/19/195201

Cite this

@article{f319b706caff40cf950910ad5b1eb572,

title = "Effect of top electrodes on photovoltaic properties of polycrystalline BiFeO3 based thin film capacitors",

abstract = "We investigated capacitors based on polycrystalline narrow-band-gap BiFeO3 (BFO) thin films with different top electrodes. The photovoltaic response for the capacitor with a Sn-doped In2O 3 (ITO) top electrode is about 25 times higher than that with a Au top electrode, which indicates that the electrode plays a key role in determining the photovoltaic response of ferroelectric thin film capacitors, as simulated by Qin et al (2009 Appl. Phys. Lett. 95 22912). The light-to-electricity photovoltaic efficiency for the ITO/polycrystalline BFO/Pt capacitor can reach 0.125\%. Furthermore, under incident light of 450νWcm -2 and zero bias, the corresponding photocurrent varies from 0.2 to 200pA, that is, almost a 1000-fold photoconductivity enhancement. Our experiments suggest that polycrystalline BFO films are promising materials for application in photo-sensitive and energy-related devices.",

author = "Bin Chen and Mi Li and Yiwei Liu and Zhenghu Zuo and Fei Zhuge and Zhan, \{Qing Feng\} and Li, \{Run Wei\}",

year = "2011",

month = may,

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doi = "10.1088/0957-4484/22/19/195201",

language = "英语",

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T1 - Effect of top electrodes on photovoltaic properties of polycrystalline BiFeO3 based thin film capacitors

AU - Chen, Bin

AU - Li, Mi

AU - Liu, Yiwei

AU - Zuo, Zhenghu

AU - Zhuge, Fei

AU - Zhan, Qing Feng

AU - Li, Run Wei

PY - 2011/5/13

Y1 - 2011/5/13

N2 - We investigated capacitors based on polycrystalline narrow-band-gap BiFeO3 (BFO) thin films with different top electrodes. The photovoltaic response for the capacitor with a Sn-doped In2O 3 (ITO) top electrode is about 25 times higher than that with a Au top electrode, which indicates that the electrode plays a key role in determining the photovoltaic response of ferroelectric thin film capacitors, as simulated by Qin et al (2009 Appl. Phys. Lett. 95 22912). The light-to-electricity photovoltaic efficiency for the ITO/polycrystalline BFO/Pt capacitor can reach 0.125%. Furthermore, under incident light of 450νWcm -2 and zero bias, the corresponding photocurrent varies from 0.2 to 200pA, that is, almost a 1000-fold photoconductivity enhancement. Our experiments suggest that polycrystalline BFO films are promising materials for application in photo-sensitive and energy-related devices.

AB - We investigated capacitors based on polycrystalline narrow-band-gap BiFeO3 (BFO) thin films with different top electrodes. The photovoltaic response for the capacitor with a Sn-doped In2O 3 (ITO) top electrode is about 25 times higher than that with a Au top electrode, which indicates that the electrode plays a key role in determining the photovoltaic response of ferroelectric thin film capacitors, as simulated by Qin et al (2009 Appl. Phys. Lett. 95 22912). The light-to-electricity photovoltaic efficiency for the ITO/polycrystalline BFO/Pt capacitor can reach 0.125%. Furthermore, under incident light of 450νWcm -2 and zero bias, the corresponding photocurrent varies from 0.2 to 200pA, that is, almost a 1000-fold photoconductivity enhancement. Our experiments suggest that polycrystalline BFO films are promising materials for application in photo-sensitive and energy-related devices.

UR - https://www.scopus.com/pages/publications/79953292356

U2 - 10.1088/0957-4484/22/19/195201

DO - 10.1088/0957-4484/22/19/195201

M3 - 文章

AN - SCOPUS:79953292356

SN - 0957-4484

VL - 22

JO - Nanotechnology

JF - Nanotechnology

IS - 19

M1 - 195201

ER -

Effect of top electrodes on photovoltaic properties of polycrystalline BiFeO₃ based thin film capacitors

Abstract

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