Effect of the post-As+-implantation thermal treatment on MBE HgCdTe optical properties

S. P. Guo; Y. Chang; J. M. Zhang; X. C. Shen; J. H. Chu; S. X. Yuan

doi:10.1007/bf02666537

Effect of the post-As⁺-implantation thermal treatment on MBE HgCdTe optical properties

S. P. Guo^*
, Y. Chang
, J. M. Zhang
, X. C. Shen
, J. H. Chu
, S. X. Yuan

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

HgCdTe epilayers were grown by molecular beam epitaxy. A series of As⁺-implanted CdTe and HgCdTe epilayers annealed under different temperatures were investigated by photoluminescence spectroscopy. More As⁺ ions can occupy the Te sublattice after the samples were annealed at 450°C, and the acceptor level of As⁺ on the Te sublattice for HgCdTe material (x = 0.39) is 31.5 meV. The Raman spectrum study indicates a recovery of the crystalline perfection after the post-As⁺-implantation thermal treatment.

Original language	English
Pages (from-to)	761-764
Number of pages	4
Journal	Journal of Electronic Materials
Volume	25
Issue number	5
DOIs	https://doi.org/10.1007/bf02666537
State	Published - Apr 1996
Externally published	Yes

Keywords

HgCdTe
Ion-implantation
MBE
Thermal treatment

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10.1007/bf02666537

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title = "Effect of the post-As+-implantation thermal treatment on MBE HgCdTe optical properties",

abstract = "HgCdTe epilayers were grown by molecular beam epitaxy. A series of As+-implanted CdTe and HgCdTe epilayers annealed under different temperatures were investigated by photoluminescence spectroscopy. More As+ ions can occupy the Te sublattice after the samples were annealed at 450°C, and the acceptor level of As+ on the Te sublattice for HgCdTe material (x = 0.39) is 31.5 meV. The Raman spectrum study indicates a recovery of the crystalline perfection after the post-As+-implantation thermal treatment.",

keywords = "HgCdTe, Ion-implantation, MBE, Thermal treatment",

author = "Guo, \{S. P.\} and Y. Chang and Zhang, \{J. M.\} and Shen, \{X. C.\} and Chu, \{J. H.\} and Yuan, \{S. X.\}",

year = "1996",

month = apr,

doi = "10.1007/bf02666537",

language = "英语",

volume = "25",

pages = "761--764",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

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TY - JOUR

T1 - Effect of the post-As+-implantation thermal treatment on MBE HgCdTe optical properties

AU - Guo, S. P.

AU - Chang, Y.

AU - Zhang, J. M.

AU - Shen, X. C.

AU - Chu, J. H.

AU - Yuan, S. X.

PY - 1996/4

Y1 - 1996/4

N2 - HgCdTe epilayers were grown by molecular beam epitaxy. A series of As+-implanted CdTe and HgCdTe epilayers annealed under different temperatures were investigated by photoluminescence spectroscopy. More As+ ions can occupy the Te sublattice after the samples were annealed at 450°C, and the acceptor level of As+ on the Te sublattice for HgCdTe material (x = 0.39) is 31.5 meV. The Raman spectrum study indicates a recovery of the crystalline perfection after the post-As+-implantation thermal treatment.

AB - HgCdTe epilayers were grown by molecular beam epitaxy. A series of As+-implanted CdTe and HgCdTe epilayers annealed under different temperatures were investigated by photoluminescence spectroscopy. More As+ ions can occupy the Te sublattice after the samples were annealed at 450°C, and the acceptor level of As+ on the Te sublattice for HgCdTe material (x = 0.39) is 31.5 meV. The Raman spectrum study indicates a recovery of the crystalline perfection after the post-As+-implantation thermal treatment.

KW - HgCdTe

KW - Ion-implantation

KW - MBE

KW - Thermal treatment

UR - https://www.scopus.com/pages/publications/5244250774

U2 - 10.1007/bf02666537

DO - 10.1007/bf02666537

M3 - 文章

AN - SCOPUS:5244250774

SN - 0361-5235

VL - 25

SP - 761

EP - 764

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

Effect of the post-As⁺-implantation thermal treatment on MBE HgCdTe optical properties

Abstract

Keywords

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