Abstract
Cu, Al and Ti films of ~10 nm thickness were deposited on porous silicon (PS) at room temperature using Filtered Cathodic Vacuum Arc system and annealed at 800°C for 10 min in vacuum. The PS layers were obtained by anodization of Si wafer. X-ray photoelectron spectroscopy, photoluminescence (PL), photo-absorption (PA), and X-ray diffraction studies revealed that after annealing, Cu- and Ti-deposited samples exhibited obvious PA red-shift and Si-2p level shift, which arise from the crystal field variation due to the formation of Cu/Ti silicides at the surface as well as the conduction electronic transportation.
| Original language | English |
|---|---|
| Pages (from-to) | 280-284 |
| Number of pages | 5 |
| Journal | Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices |
| Volume | 15 |
| Issue number | 3 |
| State | Published - Jun 2009 |
Keywords
- Crystal field
- Metallization
- Porous silicon