Effect of sulfurization temperature of solution-processed Cu2SnS3 absorber for low cost photovoltaic cells

Qiao Zhang; Hongmei Deng; Jiejin Yu; Bin Xu; Jiahua Tao; Pingxiong Yang; Lin Sun; Junhao Chu

doi:10.1016/j.matlet.2018.06.083

Effect of sulfurization temperature of solution-processed Cu₂SnS₃ absorber for low cost photovoltaic cells

Qiao Zhang, Hongmei Deng, Jiejin Yu, Bin Xu, Jiahua Tao, Pingxiong Yang, Lin Sun, Junhao Chu

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Cu₂SnS₃ (CTS) films were deposited on the Mo-coated glass substrates by a facile solution method with a post-sulfurization technique and the CTS-based solar cells were also fabricated successfully. The influencing mechanisms of the sulfurization temperature on the CTS absorber were investigated systematically. It is found that the CTS absorber with high crystallinity and no impurity was obtained at the temperature of 540 °C confirmed by XRD and Raman analysis. Moreover, significant improvement of microstructure was achieved by increasing the temperature to 540 °C but voids appeared at higher temperature of 570 °C. The Monoclinic CTS thin films sulfurized at 540 °C were used to fabricate CTS solar cell with Mo/CTS/CdS/i-ZnO/AZO/Ag structure, exhibiting efficiency of 3.05%.

Original language	English
Pages (from-to)	447-449
Number of pages	3
Journal	Materials Letters
Volume	228
DOIs	https://doi.org/10.1016/j.matlet.2018.06.083
State	Published - 1 Oct 2018

Keywords

CuSnS
Sol-gel preparation
Solar energy materials
Structural

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.matlet.2018.06.083

Cite this

@article{dbd31a2d831f41109e36b8b3a9d4deb8,

title = "Effect of sulfurization temperature of solution-processed Cu2SnS3 absorber for low cost photovoltaic cells",

abstract = "Cu2SnS3 (CTS) films were deposited on the Mo-coated glass substrates by a facile solution method with a post-sulfurization technique and the CTS-based solar cells were also fabricated successfully. The influencing mechanisms of the sulfurization temperature on the CTS absorber were investigated systematically. It is found that the CTS absorber with high crystallinity and no impurity was obtained at the temperature of 540 °C confirmed by XRD and Raman analysis. Moreover, significant improvement of microstructure was achieved by increasing the temperature to 540 °C but voids appeared at higher temperature of 570 °C. The Monoclinic CTS thin films sulfurized at 540 °C were used to fabricate CTS solar cell with Mo/CTS/CdS/i-ZnO/AZO/Ag structure, exhibiting efficiency of 3.05\%.",

keywords = "CuSnS, Sol-gel preparation, Solar energy materials, Structural",

author = "Qiao Zhang and Hongmei Deng and Jiejin Yu and Bin Xu and Jiahua Tao and Pingxiong Yang and Lin Sun and Junhao Chu",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2018",

month = oct,

day = "1",

doi = "10.1016/j.matlet.2018.06.083",

language = "英语",

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pages = "447--449",

journal = "Materials Letters",

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TY - JOUR

T1 - Effect of sulfurization temperature of solution-processed Cu2SnS3 absorber for low cost photovoltaic cells

AU - Zhang, Qiao

AU - Deng, Hongmei

AU - Yu, Jiejin

AU - Xu, Bin

AU - Tao, Jiahua

AU - Yang, Pingxiong

AU - Sun, Lin

AU - Chu, Junhao

PY - 2018/10/1

Y1 - 2018/10/1

N2 - Cu2SnS3 (CTS) films were deposited on the Mo-coated glass substrates by a facile solution method with a post-sulfurization technique and the CTS-based solar cells were also fabricated successfully. The influencing mechanisms of the sulfurization temperature on the CTS absorber were investigated systematically. It is found that the CTS absorber with high crystallinity and no impurity was obtained at the temperature of 540 °C confirmed by XRD and Raman analysis. Moreover, significant improvement of microstructure was achieved by increasing the temperature to 540 °C but voids appeared at higher temperature of 570 °C. The Monoclinic CTS thin films sulfurized at 540 °C were used to fabricate CTS solar cell with Mo/CTS/CdS/i-ZnO/AZO/Ag structure, exhibiting efficiency of 3.05%.

AB - Cu2SnS3 (CTS) films were deposited on the Mo-coated glass substrates by a facile solution method with a post-sulfurization technique and the CTS-based solar cells were also fabricated successfully. The influencing mechanisms of the sulfurization temperature on the CTS absorber were investigated systematically. It is found that the CTS absorber with high crystallinity and no impurity was obtained at the temperature of 540 °C confirmed by XRD and Raman analysis. Moreover, significant improvement of microstructure was achieved by increasing the temperature to 540 °C but voids appeared at higher temperature of 570 °C. The Monoclinic CTS thin films sulfurized at 540 °C were used to fabricate CTS solar cell with Mo/CTS/CdS/i-ZnO/AZO/Ag structure, exhibiting efficiency of 3.05%.

KW - CuSnS

KW - Sol-gel preparation

KW - Solar energy materials

KW - Structural

UR - https://www.scopus.com/pages/publications/85048993396

U2 - 10.1016/j.matlet.2018.06.083

DO - 10.1016/j.matlet.2018.06.083

M3 - 文章

AN - SCOPUS:85048993396

SN - 0167-577X

VL - 228

SP - 447

EP - 449

JO - Materials Letters

JF - Materials Letters

ER -