Effect of substitution of vanadium on the structure and electrical properties of Bi3.25La0.75Ti3O12 thin films

X. J. Meng; J. H. Ma; J. L. Sun; T. Lin; J. Yu; G. S. Wang; J. H. Chu

doi:10.1007/s00339-003-2172-y

Effect of substitution of vanadium on the structure and electrical properties of Bi_3.25La_0.75Ti₃O₁₂ thin films

X. J. Meng^*
, J. H. Ma
, J. L. Sun
, T. Lin
, J. Yu
, G. S. Wang
, J. H. Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The ferroelectric and dielectric properties of Bi_4-xLa _xTi₃O₁₂ (BLT) and B_4-xLa _xTi_2.97O₁₂ (BLTV) thin films deposited on (111)Pt/Ti/SiO₂/Si substrates using a chemical solution method were investigated. The BLTV thin films showed a larger remanent polarization (9.6 μC/cm²) than the BLT thin films (6.5 μC/cm²), while the coercive field for both thin films was nearly the same. The capacitance of the films as a function of a small ac driving field was measured, and the data were processed using Rayleigh's law. The results show that the Rayleigh constant of the BLT films was smaller than that of the BLTV films, indicating that the defect concentration was lower in the latter case. The superior ferroelectricity of the BLTV films was attributed to a decrease of both the (001) orientation and the defect concentration.

Original language	English
Pages (from-to)	1089-1091
Number of pages	3
Journal	Applied Physics A: Materials Science and Processing
Volume	78
Issue number	7
DOIs	https://doi.org/10.1007/s00339-003-2172-y
State	Published - Apr 2004
Externally published	Yes

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title = "Effect of substitution of vanadium on the structure and electrical properties of Bi3.25La0.75Ti3O12 thin films",

abstract = "The ferroelectric and dielectric properties of Bi4-xLa xTi3O12 (BLT) and B4-xLa xTi2.97O12 (BLTV) thin films deposited on (111)Pt/Ti/SiO2/Si substrates using a chemical solution method were investigated. The BLTV thin films showed a larger remanent polarization (9.6 μC/cm2) than the BLT thin films (6.5 μC/cm2), while the coercive field for both thin films was nearly the same. The capacitance of the films as a function of a small ac driving field was measured, and the data were processed using Rayleigh's law. The results show that the Rayleigh constant of the BLT films was smaller than that of the BLTV films, indicating that the defect concentration was lower in the latter case. The superior ferroelectricity of the BLTV films was attributed to a decrease of both the (001) orientation and the defect concentration.",

author = "Meng, \{X. J.\} and Ma, \{J. H.\} and Sun, \{J. L.\} and T. Lin and J. Yu and Wang, \{G. S.\} and Chu, \{J. H.\}",

year = "2004",

month = apr,

doi = "10.1007/s00339-003-2172-y",

language = "英语",

volume = "78",

pages = "1089--1091",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

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}

TY - JOUR

T1 - Effect of substitution of vanadium on the structure and electrical properties of Bi3.25La0.75Ti3O12 thin films

AU - Meng, X. J.

AU - Ma, J. H.

AU - Sun, J. L.

AU - Lin, T.

AU - Yu, J.

AU - Wang, G. S.

AU - Chu, J. H.

PY - 2004/4

Y1 - 2004/4

N2 - The ferroelectric and dielectric properties of Bi4-xLa xTi3O12 (BLT) and B4-xLa xTi2.97O12 (BLTV) thin films deposited on (111)Pt/Ti/SiO2/Si substrates using a chemical solution method were investigated. The BLTV thin films showed a larger remanent polarization (9.6 μC/cm2) than the BLT thin films (6.5 μC/cm2), while the coercive field for both thin films was nearly the same. The capacitance of the films as a function of a small ac driving field was measured, and the data were processed using Rayleigh's law. The results show that the Rayleigh constant of the BLT films was smaller than that of the BLTV films, indicating that the defect concentration was lower in the latter case. The superior ferroelectricity of the BLTV films was attributed to a decrease of both the (001) orientation and the defect concentration.

AB - The ferroelectric and dielectric properties of Bi4-xLa xTi3O12 (BLT) and B4-xLa xTi2.97O12 (BLTV) thin films deposited on (111)Pt/Ti/SiO2/Si substrates using a chemical solution method were investigated. The BLTV thin films showed a larger remanent polarization (9.6 μC/cm2) than the BLT thin films (6.5 μC/cm2), while the coercive field for both thin films was nearly the same. The capacitance of the films as a function of a small ac driving field was measured, and the data were processed using Rayleigh's law. The results show that the Rayleigh constant of the BLT films was smaller than that of the BLTV films, indicating that the defect concentration was lower in the latter case. The superior ferroelectricity of the BLTV films was attributed to a decrease of both the (001) orientation and the defect concentration.

UR - https://www.scopus.com/pages/publications/1842482277

U2 - 10.1007/s00339-003-2172-y

DO - 10.1007/s00339-003-2172-y

M3 - 文章

AN - SCOPUS:1842482277

SN - 0947-8396

VL - 78

SP - 1089

EP - 1091

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 7

ER -

Effect of substitution of vanadium on the structure and electrical properties of Bi_3.25La_0.75Ti₃O₁₂ thin films

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