Effect of sputtering working pressure on microstructures and properties of PZT thin films

X. D. Zhang; T. Lin; X. J. Meng; J. L. Sun; J. H. Chu; Sungmin Park; Hyosang Kwon; Jihwan Hwang; Gwangseo Park

doi:10.1080/10584587.2009.490184

Effect of sputtering working pressure on microstructures and properties of PZT thin films

X. D. Zhang
, T. Lin
, X. J. Meng
, J. L. Sun
, J. H. Chu
, Sungmin Park
, Hyosang Kwon
, Jihwan Hwang
, Gwangseo Park

School of Physics and Electronic Science

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

In this work, PZT (52/48) and PZT (30/70) thin films were deposited at a substrate temperature of 600°C with Argon gas pressure ranging from 2.8 × 10^-2 mbar to 4.3 × 10^-3 mbar by r. f. magnetron sputtering on LNO/Si substrates. Highly (100)-oriented rhombohedral structured PZT (52/48) thin films were formed. We found that the out-of-plane lattice constant increased commensurately with a decrease in Ar pressure, while remnant polarization and dielectric constant increased with decreasing Ar pressure. On the other hand, the PZT (30/70) thin films sputter-deposited on LNO/Si(100) at substrate temperatures of 600°C with various Ar gas pressures formed a tetragonal structure. The fraction of c-domain, hence the remnant polarization, increased with decreasing Ar pressure, while the dielectric constant decreased with decreasing Ar pressure.

Original language	English
Pages (from-to)	31-40
Number of pages	10
Journal	Integrated Ferroelectrics
Volume	113
Issue number	1
DOIs	https://doi.org/10.1080/10584587.2009.490184
State	Published - 2009
Event	21st International Symposium on Integrated Ferroelectrics and Functionalities, ISIF2 2009 - Colorado Springs, CO, United States Duration: 27 Sep 2009 → 30 Sep 2009

Access to Document

10.1080/10584587.2009.490184

Cite this

@article{6030e9ae225c46cf960713fea518f586,

title = "Effect of sputtering working pressure on microstructures and properties of PZT thin films",

abstract = "In this work, PZT (52/48) and PZT (30/70) thin films were deposited at a substrate temperature of 600°C with Argon gas pressure ranging from 2.8 × 10-2 mbar to 4.3 × 10-3 mbar by r. f. magnetron sputtering on LNO/Si substrates. Highly (100)-oriented rhombohedral structured PZT (52/48) thin films were formed. We found that the out-of-plane lattice constant increased commensurately with a decrease in Ar pressure, while remnant polarization and dielectric constant increased with decreasing Ar pressure. On the other hand, the PZT (30/70) thin films sputter-deposited on LNO/Si(100) at substrate temperatures of 600°C with various Ar gas pressures formed a tetragonal structure. The fraction of c-domain, hence the remnant polarization, increased with decreasing Ar pressure, while the dielectric constant decreased with decreasing Ar pressure.",

author = "Zhang, \{X. D.\} and T. Lin and Meng, \{X. J.\} and Sun, \{J. L.\} and Chu, \{J. H.\} and Sungmin Park and Hyosang Kwon and Jihwan Hwang and Gwangseo Park",

year = "2009",

doi = "10.1080/10584587.2009.490184",

language = "英语",

volume = "113",

pages = "31--40",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1",

note = "21st International Symposium on Integrated Ferroelectrics and Functionalities, ISIF2 2009 ; Conference date: 27-09-2009 Through 30-09-2009",

}

TY - JOUR

T1 - Effect of sputtering working pressure on microstructures and properties of PZT thin films

AU - Zhang, X. D.

AU - Lin, T.

AU - Meng, X. J.

AU - Sun, J. L.

AU - Chu, J. H.

AU - Park, Sungmin

AU - Kwon, Hyosang

AU - Hwang, Jihwan

AU - Park, Gwangseo

PY - 2009

Y1 - 2009

N2 - In this work, PZT (52/48) and PZT (30/70) thin films were deposited at a substrate temperature of 600°C with Argon gas pressure ranging from 2.8 × 10-2 mbar to 4.3 × 10-3 mbar by r. f. magnetron sputtering on LNO/Si substrates. Highly (100)-oriented rhombohedral structured PZT (52/48) thin films were formed. We found that the out-of-plane lattice constant increased commensurately with a decrease in Ar pressure, while remnant polarization and dielectric constant increased with decreasing Ar pressure. On the other hand, the PZT (30/70) thin films sputter-deposited on LNO/Si(100) at substrate temperatures of 600°C with various Ar gas pressures formed a tetragonal structure. The fraction of c-domain, hence the remnant polarization, increased with decreasing Ar pressure, while the dielectric constant decreased with decreasing Ar pressure.

AB - In this work, PZT (52/48) and PZT (30/70) thin films were deposited at a substrate temperature of 600°C with Argon gas pressure ranging from 2.8 × 10-2 mbar to 4.3 × 10-3 mbar by r. f. magnetron sputtering on LNO/Si substrates. Highly (100)-oriented rhombohedral structured PZT (52/48) thin films were formed. We found that the out-of-plane lattice constant increased commensurately with a decrease in Ar pressure, while remnant polarization and dielectric constant increased with decreasing Ar pressure. On the other hand, the PZT (30/70) thin films sputter-deposited on LNO/Si(100) at substrate temperatures of 600°C with various Ar gas pressures formed a tetragonal structure. The fraction of c-domain, hence the remnant polarization, increased with decreasing Ar pressure, while the dielectric constant decreased with decreasing Ar pressure.

UR - https://www.scopus.com/pages/publications/79955494917

U2 - 10.1080/10584587.2009.490184

DO - 10.1080/10584587.2009.490184

M3 - 会议文章

AN - SCOPUS:79955494917

SN - 1058-4587

VL - 113

SP - 31

EP - 40

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1

T2 - 21st International Symposium on Integrated Ferroelectrics and Functionalities, ISIF2 2009

Y2 - 27 September 2009 through 30 September 2009

ER -

Effect of sputtering working pressure on microstructures and properties of PZT thin films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this