Effect of sputtering technology on the microstructure and magnetic properties of Cu/SiO2/Ni80Fe20 composite wires

Xiao Qi Pan, Xin Li, Hai Lin Pan, Qiang Zhao, Jian Zhong Ruan, Xiao Feng Ji, De Lu Chen, Zhen Jie Zhao*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this work, Cu/SiO2 and Cu/SiO2/Ni80Fe20 composite wires were prepared by RF magnetron sputtering on the rotating substrate of Cu. The influence of the rotating rates during sputtering SiO2 on the microstructure and giant magnetoimpedance (GMI) effect of the composite wires was investigated by the methods of SEM and impedance analyzer. The results showed that with the increase of the rotating rate, the particle size of the film surface first decreased and then increased, while the GMI effect of the Cu/SiO2/Ni80Fe20 composite wires first increased and then decreased.

Original languageEnglish
Pages (from-to)10095-10097+10101
JournalGongneng Cailiao/Journal of Functional Materials
Volume45
Issue number10
DOIs
StatePublished - 30 May 2014
Externally publishedYes

Keywords

  • Composite wires
  • GMI effect
  • Grain size
  • Rotating rate

Fingerprint

Dive into the research topics of 'Effect of sputtering technology on the microstructure and magnetic properties of Cu/SiO2/Ni80Fe20 composite wires'. Together they form a unique fingerprint.

Cite this