Effect of sputtered Cu film's diffusion barrier on the growth and field emission properties of carbon nanotubes by chemical vapor deposition

  • Lili Wang
  • , Ting Chen
  • , Tao Feng
  • , Yiwei Chen
  • , Wenxiu Que
  • , Lifeng Lin
  • , Zhuo Sun*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Growth of carbon nanotube (CNT) films with good field emission properties on glass is very important for low cost field emission display (FED) applications. In addition to Ni, Co and Fe, Cu can be a good catalyst for CNT growth on glass, but due to diffusion into SiO2 it is difficult to control the CNTs density and uniformity. In this paper, four metal barrier layers (W, Ni, Cr, Ti) were deposited by dc magnetron sputtering on glass to reduce the Cu diffusion. As-grown CNT films showed various morphologies with the use of different barrier metals. CNTs with uniform distribution and better crystallinity can be synthesized only on Ti/Cu and W/Cu. Voltage current measurements indicate that better field emission properties of CNT films can be obtained on titanium and tungsten barriered Cu, while chromium and nickel are not suitable barrier candidates for copper in CNT-FED applications because of the reduced emission performance.

Original languageEnglish
Pages (from-to)701-704
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume90
Issue number4
DOIs
StatePublished - Mar 2008

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