Effect of Si, F implantation on the formation and light emitting properties of porous silicon

Lianwei Wang; Chenglu Lin; Ping Liu; Zuyao Zhou; Shichang Zou

Effect of Si, F implantation on the formation and light emitting properties of porous silicon

Lianwei Wang^*
, Chenglu Lin
, Ping Liu
, Zuyao Zhou
, Shichang Zou

^*Corresponding author for this work

CAS - Shanghai Institute of Microsystem and Information Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The effect of ion implantation on the formation and light emitting properties of porous silicon is reported. Si⁺, F⁺ ions were implanted into silicon wafers before electrochemical etching process. The experiments showed that porous structure can be formed on the wafer containing amorphous layer, while the porosity distribution with the depth changed greatly compared with the anodized crystalline Si. The implantation of F⁺ ions greatly affects the formation mechanism. The creation of point defects leads to red-shift in photoluminescence measurements.

Original language	English
Title of host publication	Materials Synthesis and Processing Using Ion Beams
Editors	Anthony F. Garito, Alex K-Y. Jen, Charles Y-C. Lee, Larry R. Dalton
Publisher	Publ by Materials Research Society
Pages	445-450
Number of pages	6
ISBN (Print)	1558992154
State	Published - 1994
Externally published	Yes
Event	Proceedings of the MRS 1993 Fall Meeting - Boston, MA, USA Duration: 29 Nov 1993 → 3 Dec 1993

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	316
ISSN (Print)	0272-9172

Conference

Conference	Proceedings of the MRS 1993 Fall Meeting
City	Boston, MA, USA
Period	29/11/93 → 3/12/93

Cite this

Wang, L., Lin, C., Liu, P., Zhou, Z., & Zou, S. (1994). Effect of Si, F implantation on the formation and light emitting properties of porous silicon. In A. F. Garito, A. K.-Y. Jen, C. Y.-C. Lee, & L. R. Dalton (Eds.), Materials Synthesis and Processing Using Ion Beams (pp. 445-450). (Materials Research Society Symposium Proceedings; Vol. 316). Publ by Materials Research Society.

Wang, Lianwei ; Lin, Chenglu ; Liu, Ping et al. / Effect of Si, F implantation on the formation and light emitting properties of porous silicon. Materials Synthesis and Processing Using Ion Beams. editor / Anthony F. Garito ; Alex K-Y. Jen ; Charles Y-C. Lee ; Larry R. Dalton. Publ by Materials Research Society, 1994. pp. 445-450 (Materials Research Society Symposium Proceedings).

@inproceedings{850c6162040748a6b381eae892d9f242,

title = "Effect of Si, F implantation on the formation and light emitting properties of porous silicon",

abstract = "The effect of ion implantation on the formation and light emitting properties of porous silicon is reported. Si+, F+ ions were implanted into silicon wafers before electrochemical etching process. The experiments showed that porous structure can be formed on the wafer containing amorphous layer, while the porosity distribution with the depth changed greatly compared with the anodized crystalline Si. The implantation of F+ ions greatly affects the formation mechanism. The creation of point defects leads to red-shift in photoluminescence measurements.",

author = "Lianwei Wang and Chenglu Lin and Ping Liu and Zuyao Zhou and Shichang Zou",

year = "1994",

language = "英语",

isbn = "1558992154",

series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

pages = "445--450",

editor = "Garito, \{Anthony F.\} and Jen, \{Alex K-Y.\} and Lee, \{Charles Y-C.\} and Dalton, \{Larry R.\}",

booktitle = "Materials Synthesis and Processing Using Ion Beams",

note = "Proceedings of the MRS 1993 Fall Meeting ; Conference date: 29-11-1993 Through 03-12-1993",

}

Wang, L, Lin, C, Liu, P, Zhou, Z & Zou, S 1994, Effect of Si, F implantation on the formation and light emitting properties of porous silicon. in AF Garito, AK-Y Jen, CY-C Lee & LR Dalton (eds), Materials Synthesis and Processing Using Ion Beams. Materials Research Society Symposium Proceedings, vol. 316, Publ by Materials Research Society, pp. 445-450, Proceedings of the MRS 1993 Fall Meeting, Boston, MA, USA, 29/11/93.

Effect of Si, F implantation on the formation and light emitting properties of porous silicon. / Wang, Lianwei; Lin, Chenglu; Liu, Ping et al.
Materials Synthesis and Processing Using Ion Beams. ed. / Anthony F. Garito; Alex K-Y. Jen; Charles Y-C. Lee; Larry R. Dalton. Publ by Materials Research Society, 1994. p. 445-450 (Materials Research Society Symposium Proceedings; Vol. 316).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of Si, F implantation on the formation and light emitting properties of porous silicon

AU - Wang, Lianwei

AU - Lin, Chenglu

AU - Liu, Ping

AU - Zhou, Zuyao

AU - Zou, Shichang

PY - 1994

Y1 - 1994

N2 - The effect of ion implantation on the formation and light emitting properties of porous silicon is reported. Si+, F+ ions were implanted into silicon wafers before electrochemical etching process. The experiments showed that porous structure can be formed on the wafer containing amorphous layer, while the porosity distribution with the depth changed greatly compared with the anodized crystalline Si. The implantation of F+ ions greatly affects the formation mechanism. The creation of point defects leads to red-shift in photoluminescence measurements.

AB - The effect of ion implantation on the formation and light emitting properties of porous silicon is reported. Si+, F+ ions were implanted into silicon wafers before electrochemical etching process. The experiments showed that porous structure can be formed on the wafer containing amorphous layer, while the porosity distribution with the depth changed greatly compared with the anodized crystalline Si. The implantation of F+ ions greatly affects the formation mechanism. The creation of point defects leads to red-shift in photoluminescence measurements.

UR - https://www.scopus.com/pages/publications/0028319527

M3 - 会议稿件

AN - SCOPUS:0028319527

SN - 1558992154

T3 - Materials Research Society Symposium Proceedings

SP - 445

EP - 450

BT - Materials Synthesis and Processing Using Ion Beams

A2 - Garito, Anthony F.

A2 - Jen, Alex K-Y.

A2 - Lee, Charles Y-C.

A2 - Dalton, Larry R.

PB - Publ by Materials Research Society

T2 - Proceedings of the MRS 1993 Fall Meeting

Y2 - 29 November 1993 through 3 December 1993

ER -

Effect of Si, F implantation on the formation and light emitting properties of porous silicon

Abstract

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