Effect of selenization time on the growth of Cu2ZnSnSe 4 thin films obtained from rapid thermal processing of stacked metallic layers

Jun He; Jiahua Tao; Xiankuan Meng; Yuchen Dong; Kezhi Zhang; Lin Sun; Pingxiong Yang; Junhao Chu

doi:10.1016/j.matlet.2014.04.001

Effect of selenization time on the growth of Cu₂ZnSnSe ₄ thin films obtained from rapid thermal processing of stacked metallic layers

Jun He
, Jiahua Tao
, Xiankuan Meng
, Yuchen Dong
, Kezhi Zhang
, Lin Sun^*
, Pingxiong Yang
, Junhao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Cu₂ZnSnSe₄ (CZTSe) thin films were prepared by the stacked elemental layer technique with post rapid thermal processing. The effect of selenization time on the growth of CZTSe thin films has been studied. Energy dispersive X-ray measurement demonstrates that deviations of metal composition are slight between the final thin films and the precursor. The infrared active modes behavior of CZTSe films were first studied by Infrared Reflectance spectroscopy, which are in excellent agreement with the calculated values and the results of Raman scattering spectrum. X-ray diffraction and Raman scattering results indicate that the crystallinity of CZTSe thin film is improved with the increase of selenization time. However, for photovoltaic application, the film selenized with 20 min is more appropriate than the other films judging from the grain size and surface flatness.

Original language	English
Pages (from-to)	1-4
Number of pages	4
Journal	Materials Letters
Volume	126
DOIs	https://doi.org/10.1016/j.matlet.2014.04.001
State	Published - 1 Jul 2014

Keywords

CZTSe
Solar energy materials
Sputtering
Thin films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.matlet.2014.04.001

Cite this

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title = "Effect of selenization time on the growth of Cu2ZnSnSe 4 thin films obtained from rapid thermal processing of stacked metallic layers",

abstract = "Cu2ZnSnSe4 (CZTSe) thin films were prepared by the stacked elemental layer technique with post rapid thermal processing. The effect of selenization time on the growth of CZTSe thin films has been studied. Energy dispersive X-ray measurement demonstrates that deviations of metal composition are slight between the final thin films and the precursor. The infrared active modes behavior of CZTSe films were first studied by Infrared Reflectance spectroscopy, which are in excellent agreement with the calculated values and the results of Raman scattering spectrum. X-ray diffraction and Raman scattering results indicate that the crystallinity of CZTSe thin film is improved with the increase of selenization time. However, for photovoltaic application, the film selenized with 20 min is more appropriate than the other films judging from the grain size and surface flatness.",

keywords = "CZTSe, Solar energy materials, Sputtering, Thin films",

author = "Jun He and Jiahua Tao and Xiankuan Meng and Yuchen Dong and Kezhi Zhang and Lin Sun and Pingxiong Yang and Junhao Chu",

year = "2014",

month = jul,

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doi = "10.1016/j.matlet.2014.04.001",

language = "英语",

volume = "126",

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TY - JOUR

T1 - Effect of selenization time on the growth of Cu2ZnSnSe 4 thin films obtained from rapid thermal processing of stacked metallic layers

AU - He, Jun

AU - Tao, Jiahua

AU - Meng, Xiankuan

AU - Dong, Yuchen

AU - Zhang, Kezhi

AU - Sun, Lin

AU - Yang, Pingxiong

AU - Chu, Junhao

PY - 2014/7/1

Y1 - 2014/7/1

N2 - Cu2ZnSnSe4 (CZTSe) thin films were prepared by the stacked elemental layer technique with post rapid thermal processing. The effect of selenization time on the growth of CZTSe thin films has been studied. Energy dispersive X-ray measurement demonstrates that deviations of metal composition are slight between the final thin films and the precursor. The infrared active modes behavior of CZTSe films were first studied by Infrared Reflectance spectroscopy, which are in excellent agreement with the calculated values and the results of Raman scattering spectrum. X-ray diffraction and Raman scattering results indicate that the crystallinity of CZTSe thin film is improved with the increase of selenization time. However, for photovoltaic application, the film selenized with 20 min is more appropriate than the other films judging from the grain size and surface flatness.

AB - Cu2ZnSnSe4 (CZTSe) thin films were prepared by the stacked elemental layer technique with post rapid thermal processing. The effect of selenization time on the growth of CZTSe thin films has been studied. Energy dispersive X-ray measurement demonstrates that deviations of metal composition are slight between the final thin films and the precursor. The infrared active modes behavior of CZTSe films were first studied by Infrared Reflectance spectroscopy, which are in excellent agreement with the calculated values and the results of Raman scattering spectrum. X-ray diffraction and Raman scattering results indicate that the crystallinity of CZTSe thin film is improved with the increase of selenization time. However, for photovoltaic application, the film selenized with 20 min is more appropriate than the other films judging from the grain size and surface flatness.

KW - CZTSe

KW - Solar energy materials

KW - Sputtering

KW - Thin films

UR - https://www.scopus.com/pages/publications/84898941663

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DO - 10.1016/j.matlet.2014.04.001

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JO - Materials Letters

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