Effect of potassium doping for ultrasonic sprayed Cu2SnS3 thin films for solar cell application

Chengzhi Ruan; Jiahua Tao; Chengyun Zhu; Chen Chen

doi:10.1007/s10854-018-9401-9

Effect of potassium doping for ultrasonic sprayed Cu₂SnS₃ thin films for solar cell application

Chengzhi Ruan^*
, Jiahua Tao
, Chengyun Zhu
, Chen Chen

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

In this work, potassium-containing Cu₂SnS₃ thin films (K_xCu_2−xSnS₃) were fabricated by a simple and low-cost ultrasonic spray pyrolysis method on glass substrates with different potassium doping concentration. Effects of various potassium concentrations on the structural, morphological and optical properties of the films were systematically investigated. The results indicate that potassium doping can well enhance the growth of particle size and decrease the band gap of the film from to 1.55 to 1.26 eV. Solar cell devices with a structure of glass/FTO/K_2−xCu₂SnS₃/CdS/ZnO/AZO have been prepared and obvious solar cell device performance improvement has been observed by 2 at% potassium doping. This potassium-containing Cu₂SnS₃ thin films could be a promising absorber material for high efficiency solar cell.

Original language	English
Pages (from-to)	12824-12829
Number of pages	6
Journal	Journal of Materials Science: Materials in Electronics
Volume	29
Issue number	15
DOIs	https://doi.org/10.1007/s10854-018-9401-9
State	Published - 1 Aug 2018

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title = "Effect of potassium doping for ultrasonic sprayed Cu2SnS3 thin films for solar cell application",

abstract = "In this work, potassium-containing Cu2SnS3 thin films (KxCu2−xSnS3) were fabricated by a simple and low-cost ultrasonic spray pyrolysis method on glass substrates with different potassium doping concentration. Effects of various potassium concentrations on the structural, morphological and optical properties of the films were systematically investigated. The results indicate that potassium doping can well enhance the growth of particle size and decrease the band gap of the film from to 1.55 to 1.26 eV. Solar cell devices with a structure of glass/FTO/K2−xCu2SnS3/CdS/ZnO/AZO have been prepared and obvious solar cell device performance improvement has been observed by 2 at\% potassium doping. This potassium-containing Cu2SnS3 thin films could be a promising absorber material for high efficiency solar cell.",

author = "Chengzhi Ruan and Jiahua Tao and Chengyun Zhu and Chen Chen",

note = "Publisher Copyright: {\textcopyright} 2018, Springer Science+Business Media, LLC, part of Springer Nature.",

year = "2018",

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doi = "10.1007/s10854-018-9401-9",

language = "英语",

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pages = "12824--12829",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

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TY - JOUR

T1 - Effect of potassium doping for ultrasonic sprayed Cu2SnS3 thin films for solar cell application

AU - Ruan, Chengzhi

AU - Tao, Jiahua

AU - Zhu, Chengyun

AU - Chen, Chen

PY - 2018/8/1

Y1 - 2018/8/1

N2 - In this work, potassium-containing Cu2SnS3 thin films (KxCu2−xSnS3) were fabricated by a simple and low-cost ultrasonic spray pyrolysis method on glass substrates with different potassium doping concentration. Effects of various potassium concentrations on the structural, morphological and optical properties of the films were systematically investigated. The results indicate that potassium doping can well enhance the growth of particle size and decrease the band gap of the film from to 1.55 to 1.26 eV. Solar cell devices with a structure of glass/FTO/K2−xCu2SnS3/CdS/ZnO/AZO have been prepared and obvious solar cell device performance improvement has been observed by 2 at% potassium doping. This potassium-containing Cu2SnS3 thin films could be a promising absorber material for high efficiency solar cell.

AB - In this work, potassium-containing Cu2SnS3 thin films (KxCu2−xSnS3) were fabricated by a simple and low-cost ultrasonic spray pyrolysis method on glass substrates with different potassium doping concentration. Effects of various potassium concentrations on the structural, morphological and optical properties of the films were systematically investigated. The results indicate that potassium doping can well enhance the growth of particle size and decrease the band gap of the film from to 1.55 to 1.26 eV. Solar cell devices with a structure of glass/FTO/K2−xCu2SnS3/CdS/ZnO/AZO have been prepared and obvious solar cell device performance improvement has been observed by 2 at% potassium doping. This potassium-containing Cu2SnS3 thin films could be a promising absorber material for high efficiency solar cell.

UR - https://www.scopus.com/pages/publications/85048040220

U2 - 10.1007/s10854-018-9401-9

DO - 10.1007/s10854-018-9401-9

M3 - 文章

AN - SCOPUS:85048040220

SN - 0957-4522

VL - 29

SP - 12824

EP - 12829

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 15

ER -

Effect of potassium doping for ultrasonic sprayed Cu₂SnS₃ thin films for solar cell application

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