Effect of planar doping in Co/SiO2-Ni/Cu/Co structures

H. Wang; Y. X. Xia; Q. Y. Jin; F. M. Li

doi:10.1016/S0304-8853(01)00101-9

Effect of planar doping in Co/SiO₂-Ni/Cu/Co structures

H. Wang
, Y. X. Xia
, Q. Y. Jin
, F. M. Li

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The effect of interfacial planar doping with insulating granular layer in a sandwiched structure was studied. By inserting a thin SiO₂-Ni layer into the sandwiched Co/Cu/Co structures, the magnetoresistance curve as a function of the magnetic field changed significantly because of reduction of interlayer coupling and the change of its switching mechanism of the magnetizations by the interface modification. The switching fields are 10 and 60Oe for the magnetization reversals in two magnetic layers. The MR peaks are square-shaped with the width of about 30 Oe and the peak MR ratio of 3.3%.

Original language	English
Pages (from-to)	683-684
Number of pages	2
Journal	Journal of Magnetism and Magnetic Materials
Volume	226-230
Issue number	PART I
DOIs	https://doi.org/10.1016/S0304-8853(01)00101-9
State	Published - 2001
Externally published	Yes

Keywords

Doping effect
Interface
Magnetoresistance
Switching fields

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10.1016/S0304-8853(01)00101-9

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title = "Effect of planar doping in Co/SiO2-Ni/Cu/Co structures",

abstract = "The effect of interfacial planar doping with insulating granular layer in a sandwiched structure was studied. By inserting a thin SiO2-Ni layer into the sandwiched Co/Cu/Co structures, the magnetoresistance curve as a function of the magnetic field changed significantly because of reduction of interlayer coupling and the change of its switching mechanism of the magnetizations by the interface modification. The switching fields are 10 and 60Oe for the magnetization reversals in two magnetic layers. The MR peaks are square-shaped with the width of about 30 Oe and the peak MR ratio of 3.3\%.",

keywords = "Doping effect, Interface, Magnetoresistance, Switching fields",

author = "H. Wang and Xia, \{Y. X.\} and Jin, \{Q. Y.\} and Li, \{F. M.\}",

year = "2001",

doi = "10.1016/S0304-8853(01)00101-9",

language = "英语",

volume = "226-230",

pages = "683--684",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier B.V.",

number = "PART I",

}

TY - JOUR

T1 - Effect of planar doping in Co/SiO2-Ni/Cu/Co structures

AU - Wang, H.

AU - Xia, Y. X.

AU - Jin, Q. Y.

AU - Li, F. M.

PY - 2001

Y1 - 2001

N2 - The effect of interfacial planar doping with insulating granular layer in a sandwiched structure was studied. By inserting a thin SiO2-Ni layer into the sandwiched Co/Cu/Co structures, the magnetoresistance curve as a function of the magnetic field changed significantly because of reduction of interlayer coupling and the change of its switching mechanism of the magnetizations by the interface modification. The switching fields are 10 and 60Oe for the magnetization reversals in two magnetic layers. The MR peaks are square-shaped with the width of about 30 Oe and the peak MR ratio of 3.3%.

AB - The effect of interfacial planar doping with insulating granular layer in a sandwiched structure was studied. By inserting a thin SiO2-Ni layer into the sandwiched Co/Cu/Co structures, the magnetoresistance curve as a function of the magnetic field changed significantly because of reduction of interlayer coupling and the change of its switching mechanism of the magnetizations by the interface modification. The switching fields are 10 and 60Oe for the magnetization reversals in two magnetic layers. The MR peaks are square-shaped with the width of about 30 Oe and the peak MR ratio of 3.3%.

KW - Doping effect

KW - Interface

KW - Magnetoresistance

KW - Switching fields

UR - https://www.scopus.com/pages/publications/33748680497

U2 - 10.1016/S0304-8853(01)00101-9

DO - 10.1016/S0304-8853(01)00101-9

M3 - 文章

AN - SCOPUS:33748680497

SN - 0304-8853

VL - 226-230

SP - 683

EP - 684

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - PART I

ER -

Effect of planar doping in Co/SiO₂-Ni/Cu/Co structures

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Keywords

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